Ka波段CMOS有源矢量合成移相器  

A Ka-band CMOS Active Vector-synthesis Phase Shifter

作　　者：刘帅 LIU Shuai(The 10th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第十研究所,成都610036

出　　处：《微波学报》2024年第3期53-56,共4页Journal of Microwaves

摘　　要：本文基于65 nm硅基互补金属氧化物半导体工艺设计了一款Ka波段有源矢量合成移相器。该电路由正交耦合器、单端转差分信号的巴伦、可变增益放大器、信号合成网络组成。基于集总LC等效模型的正交发生器能够实现紧凑尺寸并获得高精度正交信号;可变增益放大器采用数字控制的共源共栅架构,能够实现精准的幅度调节,并提高输入输出之间的隔离度。实测结果表明,该移相器可在25 GHz~32 GHz频带范围内实现360°移相,相位步进5.625°,均方根(RMS)相位误差小于3°,寄生调幅RMS小于1 dB,电路面积为800μm×400μm,功耗11 mW。A Ka-band active vector synthesis phase shifter implemented in 65 nm silicon based complementary metal oxide semiconductor process is presented.The circuit is composed of orthogonal coupler,single-ended to differential signal balun,variable gain amplifier and a signal synthesis network.Based on lumped LC equivalent model,the quadrature generator can achieve compact size and obtain high precision orthogonal signal.The variable gain amplifier consisting of digitally controlled cascode topology is employed to perform precise gain tuning and improve the isolation between input and output.Measured results prove that the phase shifter can cover full 360°with 5.625°phase step and provide accurate phase tuning with root mean square(RMS)phase error<3°and RMS gain error<1 dB over 25 GHz~32 GHz.The circuit area is 800μm×400μm and the power consumption is 11 mW.

关 键 词：互补金属氧化物半导体 矢量合成 移相器 可变增益放大器 共源共栅 

分 类 号：TN623[电子电信—电路与系统] TN386.1