1000V 4H-SiC VDMOS结构设计与特性研究  

Structure Design and Characteristics Research of 1000V 4H-SiC VDMOS

作　　者：李尧 牛瑞霞 王爱玲 王奋强 蓝俊 张栩莹 张鹏杰 刘良朋 吴回州 LI Yao;NIU Ruixia;WANG Ailing;WANG Fenqiang;LAN Jun;ZHANG Xuying;ZHANG Pengjie;LIU Liangpeng;WU Huizhou(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,CHN)

机构地区：[1]兰州交通大学电子与信息工程学院,兰州730070

出　　处：《半导体光电》2024年第3期378-383,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61905102,62264008);兰州市青年科技人才创新项目(2023-QNQ-119).

摘　　要：设计并优化了一种基于4H-SiC的1000V垂直双扩散金属氧化物半导体场效应晶体管(VDMOS),在留有50%的裕度后,通过Silvaco仿真软件详细研究了器件各项参数与耐压特性之间的关系。经优化,器件的阈值电压为2.3V,击穿电压达1525V,相较于相同耐压条件下的Si基VDMOS,4H-SiC VDMOS的击穿电压提升了12%。此外,击穿时4H-SiC VDMOS表面电场分布相对均匀,最大值为3.4×10^(6)V/cm。终端有效长度为15μm,约为Si基VDMOS的6%,总体面积减小了近1/10。并且4H-SiC VDMOS结构简单,与相同耐压条件下的Si基VDMOS相比,未增加额外的工艺步骤,易于实现。This study focuses on designing and optimizing a 1000V vertical double-diffusion metal oxide semiconductor(VDMOS)field-effect transistor using 4H-SiC.Leveraging Silvaco simulation software,we comprehensively investigate the relationship between device parameters and withstand voltage characteristics,aiming for a 50%margin.Following optimization,the device achieves a threshold voltage of 2.3V,with the breakdown voltage reaching 1525V.Compared with an Si-based VDMOS under identical withstand voltage conditions,the breakdown voltage of the 4H-SiC VDMOS increases by 12%.Notably,the surface electric field distribution of the 4H-SiC VDMOS during breakdown remains relatively uniform,with a maximum value of 3.4×10^(6)V/cm.The effective terminal length measures at 15μm,approximately 6%that of an Sibased VDMOS,with the overall area reducing by nearly 1/10.Furthermore,the structure is simpler compared to that of the 4H-SiC VDMOS under identical withstand voltage conditions.It involves no additional process steps,thus facilitating easy device fabrication.

关 键 词：4H-SIC 垂直双扩散金属氧化物半导体场效应晶体管 击穿电压 漂移区参数 沟道长度 

分 类 号：TN386.1[电子电信—物理电子学]