InGaAs单光子探测器封装技术进展  

Progress in Packaging Technology of InGaAs Avalanche Photodiode Detectors

作　　者：张晨阳 莫德锋[2] 徐红艳[2] 马英杰 李雪[2] 苏文献[1] Zhang Chenyang;Mo Defeng;Xu Hongyan;Ma Yingjie;Li Xue;Su Wenxian(School of Energy and Power Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;National Key Laboratory of Infrared Detection Technologies,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]上海理工大学能源与动力工程学院,上海200093 [2]中国科学院上海技术物理研究所红外探测全国重点实验室,上海200083

出　　处：《激光与光电子学进展》2024年第9期102-111,共10页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(62075229,62175250);上海市科技重大项目(2019SZZX01)。

摘　　要：InGaAs单光子探测器已被广泛应用于激光三维成像、长距离高速数字通信、自由空间光通信和量子通信等。针对单元、线列和小面阵器件,已发展出同轴封装、蝶形封装、插针网格阵列封装等多种封装形式。探讨了温度对InGaAs单光子器件性能的影响及组件温控方法;系统比较分析了针对光学元件如微透镜、透镜、光纤等与芯片的高精度耦合方法;针对高频信号输出,总结了引线类型、布线方式、封装结构设计等问题;展望了InGaAs单光子探测器的发展趋势。InGaAs singlephoton detectors are extensively used in laser 3D imaging,longdistance highspeed digital communication,freespace optical communication,and quantum communication.Different packaging formats,including coaxial packaging,butterfly packaging,and pin grid array packaging,have been designed for unit,line array,and small panel array devices.The impact of the temperature on the efficacy of InGaAs singlephoton devices and the methodologies for controlling component temperature are discussed.Detailed comparisons and analyses of highprecision coupling methods for optical components such as microlenses,lenses,optical fibers,etc.to the semiconductor are provided.For highfrequency signal output,the lead type,wiring method,packaging structure design,and other issues are reviewed,and the development trend of the InGaAs singlephoton detectors is forecasted.

关 键 词：雪崩光电二极管 INGAAS 单光子探测器 封装 

分 类 号：TN312.7[电子电信—物理电子学]