场效应晶体管太赫兹探测器在太赫兹成像领域的研究进展(上)  

Research Progress of Field Effect Transistor Terahertz Detector in Terahertz Imaging(Ⅰ)

作　　者：靳晨阳 康亚茹 黄镇 赵永梅[1,2,4,5] 颜伟 李兆峰[1,2,3,5] 王晓东 杨富华[1,2,5] JIN Chen-yang;KANG Yaru;HUANG Zhen;ZHAO Yong-mei;YAN Wei;LI Zhao-feng;WANG Xiao-dong;YANG Fu-hua(Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing100083,China;Center of Materials Science and Optoelectronics Engineering,University ofChineseAcademy of Sciences,Beijing100049,China;School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China;School of Electronic,Electrical and Communication Engineering,University of Chinese Academy of Sciences,Beijing100049,China;College of Materials Science and Opto-Electronics Technology,University of Chinese Academy of Sciences,Beijing100049,China;Research Center,HuBei Jiufengshan Laboratory,Wuhan 430074,China)

机构地区：[1]中国科学院半导体研究所半导体集成技术工程研究中心,北京100083 [2]中国科学院大学材料与光电研究中心,北京100049 [3]中国科学院大学集成电路学院,北京100049 [4]中国科学院大学电子电气与通信工程学院,北京100049 [5]中国科学院大学材料科学与光电技术学院,北京100049 [6]湖北九峰山实验室研究中心,湖北武汉430074

出　　处：《红外》2024年第7期1-8,共8页Infrared

基　　金：国家自然科学基金项目(61971395,52075519)。

摘　　要：太赫兹(Terahertz,THz)波具有能量低、穿透性强、分辨率高等特性,因而THz成像技术在安全检测、医学诊断、无损探伤等领域具有广阔的应用前景。THz探测器作为THz成像系统的重要组成部分,其性能对成像分辨率、成像速度等有重要影响。由于具备可室温工作、易大面积集成、响应速度快等特性,场效应晶体管(Field Effect Transistor,FET)THz探测器在成像应用中潜力巨大。综述了近年来FET THz探测器在THz成像领域的研究进展(包括成像阵列、材料选择等方面),分析了设计和制造中存在的问题;指出天线和像素间距是限制大规模阵列化的重要因素,并在此基础上对未来的研究方向进行了展望;指出新的材料和结构设计将进一步改善器件性能,从而实现更快速、更清晰的THz成像。Terahertz(THz)waves have characteristics such as low energy,strong penetration,and high resolution.Therefore,THz imaging technology has broad prospects in areas such as security inspection,medical diagnosis,and non-destructive testing.As an important component of THz imaging systems,the performance of THz detectors has a significant impact on imaging resolution and speed.Field effect transistor(FET)THz detectors,due to their characteristics of room temperature operation,easy large-scale integration,and fast response speed,have enormous potential in imaging applications.This paper reviews the research progress of FET THz detectors in the field of THz imaging in recent years,including advances in imaging arrays,material selection,and analysis of existing design and manufacturing issues.It points out that the antenna and pixel spacing are important factors limiting large-scale arraying.Based on this,it provides an outlook on future research directions,indicating that new materials and structural designs will further improve device performance,achieving faster and clearer THz imaging.

关 键 词：太赫兹成像 场效应晶体管 太赫兹探测器 HEMT CMOS 低维材料 

分 类 号：TN386[电子电信—物理电子学]