VDMOS单粒子效应简化电路模型研究  

Research on simplified circuit model of VDMOS single event effect

作　　者：徐大为[1] 徐政[1] 吴素贞[1] 陈睿凌 赵小寒 彭宏伟 XU Dawei;XU Zheng;WU Suzhen;CHEN Ruiling;ZHAO Xiaohan;PENG Hongwei(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第58研究所,无锡214035

出　　处：《集成电路与嵌入式系统》2024年第8期72-77,共6页Integrated Circuits and Embedded Systems

摘　　要：通过在功率VDMOS器件的等效电路模型中引入电阻分析器件的表面电压对其单粒子效应的影响。根据仿真数据,分析颈区宽度、P+注入和反向传输电容等参数对器件的影响,设计了250 V器件并进行辐照试验。仿真结果及试验结果与模型分析的结论一致:辐照条件下,表面电压由电阻分压确定;增加P+注入剂量和减小颈区条宽能够减小电阻,提高器件抗单粒子效应的能力;通过降低颈区浓度减小反向传输电容的方法,无法提高器件的抗SEE能力;颈区条宽增加,器件辐照后漏电增加。By introducing resistance into the equivalent circuit model of power VDMOS devices,the influence of device surface voltage on its Single-Event Effects(SEE)is analyzed.Based on simulation data,the influence of parameters such as neck width,P+implants,and reverse transfer capacitance(Crr)on the device is analyzed.A 250 V device is designed and tested under irradiation conditions.The simulation and experimental results are consistent with the conclusions of the model analysis.Under irradiation conditions,the surface voltage is determined by the partial voltage of the resistance.Increasing the injection dose of P+implantation and reducing the width of the neck region can reduce the resistance and improve the device's ability to resist single particle effects.Conversely,reducing the neck concentration to form a low Crr has no alleviating effect on the SEE.In addition,devices with increased neck width show increased leakage after irradiation.

关 键 词：功率VDMOS器件 单粒子效应 简化电路模型 表面电压 

分 类 号：TN386[电子电信—物理电子学]