AlGaN/GaN异质结HEMT电学特性仿真研究  

Simulation research on electrical characteristic of AlGaN/GaN heterojunction HEMT

作　　者：李尧 张栩莹 王爱玲 牛瑞霞 王奋强 蓝俊 张鹏杰 刘良朋 吴回州 LI Yao;ZHANG Xuying;WANG Ailing;NIU Ruixia;WANG Fenqiang;LAN Jun;ZHANG Pengjie;LIU Liangpeng;WU Huizhou(School of Electronic and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China)

机构地区：[1]兰州交通大学电子与信息工程学院,甘肃兰州730070

出　　处：《现代电子技术》2024年第16期23-27,共5页Modern Electronics Technique

基　　金：国家自然科学基金项目(61905102);国家自然科学基金项目(62264008);兰州市青年科技人才创新项目(2023-QNQ-119);甘肃省高校青年博士支持项目(2024QB-050);开放课题(甘财教[2023]36号-集成电路产业研究院)。

摘　　要：GaN基高电子迁移率晶体管(HEMT)作为宽禁带功率半导体器件的代表,在电子电路的应用方面有巨大的潜力。GaN HEMT因其高击穿电压、高电子迁移率等优异性能,适用于各种高频、高功率器件,并被广泛应用于雷达和航空航天等领域。文中利用Silvaco TCAD软件,定义了AlGaN/GaN单异质结和双异质结HEMT结构,并对其转移特性、输出特性、频率特性和热特性进行了仿真研究。结果表明,AlGaN/GaN双异质结HEMT比单异质结器件具有更好的性能。这主要得益于双异质结二维电子气具有更好的限域性,并且载流子迁移率高的优势。GaN-based high-electron-mobility transistor(HEMT),as the representative of wide-band-gap power semiconductor devices,has great potential for applications in electronic circuits.GaN HEMT is suitable for a variety of high-frequency and high-power devices due to its excellent properties such as high breakdown voltage and high electron mobility,and is widely used in radar,aerospace and other fields.AlGaN/GaN single-heterojunction and dual-heterojunction HEMT structures are defined by means of Silvaco TCAD software,and their transfer characteristics,output characteristics,frequency characteristics and thermal characteristics are simulated.The results show that AlGaN/GaN dual-heterojunction HEMT has better performance than single-heterojunction device.This is mainly due to the advantages of better confinement and high carrier mobility of the dual-heterojunction 2-dimensional electron gas(2DEG).

关 键 词：ALGAN/GAN异质结 HEMT 二维电子气 转移特性 输出特性 频率特性 热特性 

分 类 号：TN386.3-34[电子电信—物理电子学]