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作 者:刘宇洋 潘东超 付迪宇 李思坤[1,2] Liu Yuyang;Pan Dongchao;Fu Diyu;Li Sikun(Department of Advanced Optical and Microelectronic Equipment,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]中国科学院上海光学精密机械研究所高端光电装备部,上海201800 [2]中国科学院大学,北京100049
出 处:《中国激光》2024年第12期227-253,共27页Chinese Journal of Lasers
基 金:国家自然科学基金(62374167,U22A2070)。
摘 要:全息光刻是一种先进的掩模对准光刻,是接近式光刻的拓展,为大面积图形制造、集成电路互连封装以及微纳结构制造提供了一种方法。用全息掩模代替接近式光刻中的二值掩模,可以提高分辨率和成像对比度。与主流的投影式光刻相比,全息光刻无需复杂的投影物镜系统,提供了一种低成本、高产率的替代方法。与传统的干涉光刻相比,全息光刻可以制造任意形状掩模图形,自由度更高。极紫外波段的全息光刻进一步将光刻分辨率提升到纳米量级。简要回顾了接近式光刻的理论与技术,介绍了全息光刻掩模设计与制造的基本原理,以及国内外研究进展。Significance Holographic lithography(HL)is an advanced mask aligner lithography technique that confers the advantages of traditional proximity lithography while enhancing lithographic resolution.HL is an extension of proximity lithography technology,and it provides a new approach for large-area pattern fabrication,integrated circuit interconnection packaging,and micro/nanostructure manufacturing.With the continuous iteration of lithography technology,mainstream projection lithography is developing toward the higher resolution and smaller feature size.However,the sophisticated system and complex manufacturing processes have led to an explosive growth in lithography costs.In particular,with the introduction of extreme ultraviolet(EUV)reflective lithography machines,lithography costs have increased several hundred times,compared with early lithography equipment costs.However,unlike projection lithography,synthetic HL does not require complex optical systems,which results in lower costs and easier maintenance.Compared with contact lithography,synthetic HL does not involve hard contact between the mask and the silicon wafer,which reduces mask contamination and shortens the mask cleaning cycle,thus extending its lifespan.By replacing binary masks with holographic masks that contain phase information,synthetic holographic lithography can achieve higher lithographic resolution and imaging contrast,compared with proximity lithography.Compared with traditional interferometric lithography,synthetic HL enables the transfer of non-periodic patterns and can be used for arbitrarily-shaped mask patterns.Additionally,it is either not affected by speckle effects or can reduce and eliminate the impact of speckle effects on imaging.Moreover,domestic mask aligner technology in China is also relatively mature,meaning that a foundation for the development of HL exists.The introduction and experimental validation of EUV proximity lithography technology have enhanced the lithographic resolution of mask aligner equipment to the nanometer
分 类 号:TN305.7[电子电信—物理电子学]
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