FinFET/GAAFET/CFET纳电子学的研究进展  

Research Progress in FinFET/GAAFET/CFET Nanoelectronics

作　　者：赵正平[1,2] ZHAO Zhengping(China Electronics Technology Group Corporation,Beijing 100846,China;National Key Laboratory of ASIC,Shijiazhuang 050057,China)

机构地区：[1]中国电子科技集团公司,北京100846 [2]专用集成电路重点试验室,石家庄050057

出　　处：《电子与封装》2024年第8期76-97,共22页Electronics & Packaging

摘　　要：集成电路延续摩尔定律的发展正在从鳍栅场效应晶体管(FinFET)纳电子学时代向原子水平上的埃(?魡)时代转变。综述了该转变阶段的三大创新发展热点,FinFET、环栅场效应晶体管(GAAFET)和互补场效应晶体管(CFET)纳电子学的发展历程和最新进展。在FinFET纳电子领域综述并分析了当今Si基CMOS集成电路的发展现状,包含覆盖了22 nm、14 nm、10 nm、7 nm和5 nm 5个发展代次的创新特点和3 nm技术节点的创新和应用。在GAAFET纳电子学领域综述并分析了各类GAAFET的结构创新,2 nm技术节点的关键技术突破,3 nm技术节点的多桥沟道场效应晶体管技术平台创新与应用,以及GAAFET有关工艺、器件结构、电路和材料等方面的创新。在CFET纳电子学领域综述并分析了CFET技术在器件模型、堆叠工艺、单胞电路设计和三维集成等方面的创新,展现出CFET超越2 nm技术节点的发展新态势。The development of integrated circuits in continuation of Moore's law is shifting from the Fin-gate field-effect transistor(FinFET)nanoelectronics era to the?魡ngstrom era at the atomic level.The development history and the latest progress of the three major innovative development hot topics in this transition stage,namely FinFET,gate-all-around field-effect transistor(GAAFET)and complementary field-effect transistor(CFET)nanoelectronics,are summarized.The current development status of Si-based CMOS integrated circuits in the FinFET nanoelectronics field is summarized and analyzed,including the innovation characteristics of five development generations covering 22 nm,14 nm,10 nm,7 nm and 5 nm,as well as the innovations and applications of 3 nm technology node.In the field of GAAFET nanoelectronics,the new structure innovations of various types of GAAFETs,the key technological breakthroughs of 2 nm technology node,the innovations and applications of multi-bridge channel field-effect transistor technology platform of 3 nm technology node,and the innovations of GAAFET related processes,device structures,circuits and materials are summarized and analyzed.The innovations of CFET technology in the field of CFET nanoelectronics,such as device models,stacking processes,cell circuit designs and three dimensional integrations,are summarized and analyzed,showing a new development trend of CFET beyond 2 nm technology node.

关 键 词：FINFET GAAFET CFET 器件模型 工艺 电路设计 3D集成 智能移动终端 

分 类 号：TN386[电子电信—物理电子学]