蓝宝石衬底在氮化镓外延生长技术中的应用进展  

Application Progress of Sapphire Substrate in Gallium Nitride Epitaxial Growth Technology

作　　者：杨志伟 Asim Abas YANG Zhi-wei;Asim Abas(School Of Intelligent Manufacturing,Jilin Vocational College of Industry and Technology,Jilin 132013,China;Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China)

机构地区：[1]吉林工业职业技术学院智能制造学院,吉林吉林132013 [2]中国科学院合肥物质科学研究院,安徽合肥230031

出　　处：《山东工业技术》2024年第3期33-40,共8页Journal of Shandong Industrial Technology

基　　金：2024年度吉林省教育厅科学研究项目“新型自加热复合纳米压印膜的制备及应用”(JJKH20241130KJ)。

摘　　要：第三代半导体技术主要涉及宽禁带半导体材料,其中氮化镓(GaN)材料因其卓越的电学和热学性能而受到广泛关注,特别是它们在高温、高功率和高频率环境下的应用潜力。在这一研究领域中,蓝宝石衬底(α-Al_(2)O_(3))主要为单晶氧化铝材料,其主要作为基板材料应用于氮化镓(GaN)外延生长技术中。蓝宝石衬底在提高GaN薄膜质量的同时,也为高性能第三代半导体器件的制造提供关键支持。本文就蓝宝石衬底的加工工艺、应用领域及面临的挑战进行进一步阐述。The third-generation semiconductor technology mainly involves wide bandgap semiconductor materials,among which gallium nitride(GaN)materials have received widespread attention due to their excellent electrical and thermal properties,especially their application potential in high temperature,high power,and high frequency environments.In this research field,sapphire substrates(α-Al_(2)O_(3))are mainly single crystal alumina materials,which are mainly used as substrate materials in gallium nitride(GaN)epitaxial growth technology.Sapphire substrates not only improve the quality of GaN films,but also provide critical support for the manufacturing of high-performance third-generation semiconductor devices.This article further elaborates on the processing technology,application fields,and challenges faced by sapphire substrates.

关 键 词：宽禁带 蓝宝石衬底 单晶氧化铝 氮化镓 外延生长 

分 类 号：TM23[一般工业技术—材料科学与工程]