温度对Ga_(0.84)In_(0.16)As/Ge_(0.93)Sn_(0.07)双结太阳电池的性能影响  

Effect of Temperature on the Performance of Ga_(0.84)In_(0.16)As/Ge_(0.93)Sn_(0.07) Double-junction Solar Cells

作　　者：崔敏[1] 于添景 李倩影 邓金祥[1] 高红丽 CUI Min;YU Tianjing;LI Qianying;DENG Jinxiang;GAO Hongli(Faculty of Science,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学理学部,北京100124

出　　处：《北京工业大学学报》2024年第10期1179-1187,共9页Journal of Beijing University of Technology

基　　金：国家自然科学基金青年基金资助项目(12204026);北京市科技新星计划资助项目(Z211100002121079)。

摘　　要：基于Varshni半导体材料带隙对温度的响应模型和Caughey-Thomas经验模型对晶格匹配的Ga_(0.84)In_(0.16)As/Ge_(0.93)Sn_(0.07)双结太阳能电池进行模拟,研究温度对材料带隙E_(g)和反向饱和电流密度J_(0)的影响,探索太阳能电池性能参数如短路电流密度J_(sc)、开路电压V_(oc)、填充因子FF和转换效率η的温度依赖性。结果表明,250~400 K温度范围内,Ga_(0.84)In_(0.16)As和Ge_(0.93)Sn_(0.07)带隙随着温度的升高分别以-0.412、-0.274 meV/K的速率呈近似线性下降;随着材料内部温度的增加,各子电池的J_0呈指数型增长,J_(sc)和V_(oc)的温度系数分别约为12.86μA/(cm^(2)·K)和-3.48 mV/K,FF从0.87降低至0.78,η从31.39%降低至17.69%。其中,Ge_(0.93)Sn_(0.07)子电池的J_(sc)、V_(oc)、FF和η的温度系数分别约6.59μA/(cm^(2)·K)、-1.76 mV/K、-0.213%/K和-0.042%/K,表明GeSn材料的温度特性不同程度地优于常规Ⅲ-Ⅴ多结电池中的Ge子电池的温度特性。该研究结果有助于推动GaInAs/GeSn基多结太阳电池的低成本发展与应用。Based on the Varshni model-temperature dependence of the energy gap and the empirical Caughey-Thomas model,Ga_(0.84)In_(0.16)As/Ge_(0.93)Sn_(0.07) double-junction solar cells under lattice matching were numerically simulated.In this study,the band gap Eg,reverse saturation current density J0 of the materials and the photovoltaic properties on temperatures were explored detailedly.Results show that band gaps of the Ga0.84 In0.16 As and Ge0.93 Sn0.07 sub-cells decrease approximately linearly in the temperature range of 250-400 K with the rates of-0.412 meV/K and-0.274 meV/K,respectively.The J_(0) of the subcell is exponentially enhanced as the material temperature increases.Temperature coefficients of Jsc and Voc are about 12.86μA/(cm^(2)·K)and-3.48 mV/K,respectively.The FF decreases from 0.87 to 0.78,and the η reduces from 31.39% to 17.69% when the temperature increases from 250 K to 400 K.In addition,the temperature coefficients of the Jsc,Voc,FF and η of the Ge_(0.93)Sn_(0.07) sub-cells are about 6.59μA/(cm^(2)·K),-1.76 mV/K,-0.213%/K and-0.042%/K,respectively,which are better than the temperature performance of the Ge sub-cells in the traditional Ⅲ-Ⅴ multi-junction cells.The results in the paper can be conducive to promote the low-cost development and application of GaInAs/GeSn-based multi-junction solar cells.

关 键 词：GeSn GAINAS 多结太阳电池 温度 光伏 温度特性 

分 类 号：TN36[电子电信—物理电子学] O47[理学—半导体物理]