氮化镓基单片功率集成技术  

GaN-Based Single-Chip Power Integration Technology

作　　者：周靖贵 陈匡黎 周琦[1] 张波[1] ZHOU Jinggui;CHEN Kuangli;ZHOU Qi;ZHANG Bo(School of Integrated Circuit Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学集成电路科学与工程学院,成都611731

出　　处：《电子科技大学学报》2024年第5期685-697,共13页Journal of University of Electronic Science and Technology of China

基　　金：国家自然科学基金(62174019);广东省基础与应用基础研究项目(2021B1515140039,2024A1515012139)。

摘　　要：宽禁带、高临界击穿电场和高饱和电子速度的材料优越性,以及铝镓氮/氮化镓(Al GaN/GaN)异质结能通过极化不连续性在其界面极化诱导出具有高浓度、高迁移率的二维电子气并制备出高电子迁移率晶体管,使氮化镓器件正成为下一代功率和射频应用领域的新型高性能电子器件。氮化镓基单片功率集成技术是减小寄生电感影响、提升集成电路开关速度、降低系统功耗和实现系统小型化的关键技术。该文围绕氮化镓单片功率集成技术,对p/n双极性沟道异质结外延结构、单片异质集成、全氮化镓集成电路和p沟道器件关键技术的研究进展进行了全面分析。The superior material properties with wide bandgap,large critical electric field,and high saturated electron velocity,in combination with the high density and high mobility two-dimensional electron gas induced at the AlGaN/GaN heterojunction by polarization discontinuity,and thus the related high electron mobility transistors,make GaN devices become new high performance electronic devices for next-generation power and RF applications.The demand for GaN-based power devices with excellent performance in emerging technology such as electric vehicles and AI is rapidly increasing.GaN single-chip power integration technology is the key approach to reduce the influence of parasitic inductance,improve the switching speed of IC,cut down the power consumption and realize the miniaturization for the whole system.Based on GaN single-chip power integration technology,this review paper presents a comprehensive and global overview for the research progress of the reported double-heterojunction based epitaxial structure with p-/n-channels,monolithic heterogeneous integration,All-GaN integrated circuits,and the core technology of p-channel devices.

关 键 词：氮化镓 异质结 二维电子气 高电子迁移率晶体管 氮化镓单片功率集成 P沟道 

分 类 号：TN432[电子电信—微电子学与固体电子学]