用于压电单晶薄膜晶圆制备的键合面清洗技术研究  

Bonding-Surface-Cleaning Technology for Preparing Piezoelectric Single-Crystal Thin-Film Wafer

作　　者：刘善群[1] 丁雨憧[1] 陈哲明 石自彬[1] 龙勇[1] 邹少红 庾桂秋 张莉 LIU Shanqun;DING Yuchong;CHEN Zheming;SHI Zibin;LONG Yong;ZOU Shaohong;YU Guiqiu;ZHANG Li(The 26th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2024年第5期700-703,728,共5页Piezoelectrics & Acoustooptics

摘　　要：高性能薄膜声表面波滤波器对压电单晶薄膜晶圆键合面的洁净度提出了严苛的要求。目前采用的常规清洗技术对因离子注入后而残留的大量颗粒等污染物的去除效率低,导致键合晶圆存在较多气泡或者空洞,因此提出了一种采用硫酸与过氧化氢混合溶液(SPM)清洗和新型复合清洗液刷洗清洗技术的两步清洗法。采用此工艺后,晶圆表面的颗粒数由离子注入后的148000降到23,有效去除了晶圆键合面沾污、颗粒等污染物,显著提高了键合晶圆的质量。该清洗技术已成功应用于压电单晶薄膜晶圆LTOI材料的制备。High performance thin-film SAW filters demands strict requirements for the cleanliness of the bonding surface of the prepared piezoelectric single-crystal thin-film wafer.Currently,the most commonly used conventional cleaning technology do not efficiently remove pollutants,which generates residual particles after ion implantation,thus resulting in numerous bubbles or voids on the bonded wafers.In this study,the conventional cleaning technology is improved.A two-step cleaning process using a sulfuric peroxide mixture for cleaning and a brushing technique using a new composite cleaning solution is proposed in this study.After performing the two-step cleaning process,the number of particles on the surface of the wafer reduced from 148000 to 23,pollutants such as dirt and particles on the bonding surface are effectively removed,and the quality of the bonded wafers improved significantly.The developed cleaning technology has been applied to prepare piezoelectric LTOI single-crystal thin-film wafer materials.

关 键 词：压电单晶薄膜晶圆 清洗技术 离子注入 晶圆键合 表面洁净度 

分 类 号：TN384[电子电信—物理电子学] TN305.2