质子辐照嬗变掺杂制备p型氧化镓的仿真研究  

Simulation Analysis of p-type Gallium Oxide Prepared by Proton Irradiation Transmutation Doping

作　　者：单梓扬 焦学胜[1] 袁大庆[1] SHAN Ziyang;JIAO Xuesheng;YUAN Daqing(China Institute of Atomic Energy,Beijing 102413,China)

机构地区：[1]中国原子能科学研究院,北京102413

出　　处：《原子能科学技术》2024年第11期2402-2411,共10页Atomic Energy Science and Technology

基　　金：国家自然科学基金(U2241279)。

摘　　要：超宽禁带半导体氧化镓是当前半导体领域研究的热点材料,但采用常规的掺杂工艺尚未在大块晶体上实现其p型掺杂,这阻碍了其应用。质子辐照嬗变掺杂是利用高能质子与靶材料核反应所产生的嬗变产物实现掺杂的方法。多种嬗变产物具有不同的掺杂效果,有望通过多种掺杂元素的库仑耦合效应实现氧化镓的p型掺杂。本文利用带电粒子反应的蒙特卡罗软件FLUKA对100 MeV质子辐照氧化镓嬗变掺杂开展仿真分析。结果表明,辐照冷却100 d后,活化活度下降约4个数量级,嬗变产物元素浓度趋于稳定。分析不同掺杂类型的嬗变产物元素浓度,表明质子辐照嬗变能形成净p型掺杂。在靶材料不同深度处的净p型掺杂浓度有所差异,在0.60~0.90 cm深度处净p型掺杂浓度最大,每1016 cm^(-2)辐照注量下可达4.26×10^(14) cm^(-3)。与40 MeV质子辐照和快中子辐照嬗变的掺杂相比,100 MeV质子辐照嬗变掺杂效率更高。Gallium oxide,a wide band gap semiconductor,is a focus material in the semiconductor field at present.Many mature processes have been developed for n-type doping of gallium oxide.However,the conventional doping process has not achieved its p-type doping on bulk crystals,which hinders its application.Proton irradiation transmutation doping is considered to be a more likely p-type doping method than thermal diffusion method and ion implantation method.Proton irradiation transmutation doping is realized by using the transmutation products produced by the nuclear reaction between high-energy protons and target materials.Proton irradiation transmutation doping can put doping atoms at lattice sites.It can also produce more uniform impurity distribution in target materials.What is more,proton irradiation transmutation can produce many elements in gallium oxide crystals.The co-doping effect of many different elements can not be considered as the superposition of single doping effect.Currently,it is considered that two element co-doping has the effect of reducing ionization energy.Therefore,it is hopeful to realize p-type doping of gallium oxide by Coulomb coupling effect of many doping elements imported by proton irradiation transmutation.In this paper,the transmutation doping of gallium oxide irradiated by 100 MeV protons was simulated and analyzed by using the Monte Carlo software FLUKA of nuclear reaction.The simulation conditions were set according to the beam output capacity of the high-current proton cyclotron of China Institute of Atomic Energy.In the analysis,there are 17 kinds of elements and about 80 kinds of nuclides that have significant influence on gallium oxide doping.Over half of nuclides are radionuclides.Simulation calculation was mainly about the activity and transmutation element concentration of gallium oxide after proton irradiation.The results show that the activation activity decreases by about four orders of magnitude after 100 cooling days,and the element concentration of transmutation products

关 键 词：氧化镓 P型掺杂 质子辐照 

分 类 号：TL99[核科学技术—核技术及应用]