GaInP/GaAs/Ge太阳电池边缘Si_(3)N_(4)钝化研究  

Study on edge Si_(3)N_(4)passivation of GaInP/GaAs/Ge solar cells

作　　者：许军 孙希鹏 韩宇 赵拓 铁剑锐 肖志斌 XU Jun;SUN Xipeng;HAN Yu;ZHAO Tuo;TIE Jianrui;XIAO Zhibin(Tianjin Hengdian Space Power Co.,Ltd.,Tianjin 300384,China)

机构地区：[1]天津恒电空间电源有限公司,天津300384

出　　处：《电源技术》2024年第12期2528-2531,共4页Chinese Journal of Power Sources

摘　　要：GaInP/GaAs/Ge太阳电池相比于Si基、CIGS、CdTe等材料具有更高的光电转换效率,结构材料具有少子寿命短、复合速率快的特点。电池在加工过程中边缘侧截面会产生大量缺陷,同时表面悬挂键造成态密度增加,表面光生少数载流子复合对光电转换性能负面影响严重。为提升电池光电转换性能,通过光刻、湿法刻蚀在电池边缘制作台阶来降低缺陷密度,通过PECVD工艺在侧截面上沉积Si_(3)N_(4)膜来中和侧截面中的悬挂键,达到钝化的目的。实验结果表明光电转换性能与砂轮切割相比提升了2.73%,与仅湿法刻蚀台阶相比,提升了1.25%。着重介绍了Si_(3)N_(4)钝化GaInP/GaAs/Ge太阳电池边缘的工艺方法、结果和讨论。Compared with materials such as Si-based,CIGS,CdTe,etc,GaInP/GaAs/Ge solar cells have a higher photoelectric conversion efficiency,and its structural materials are characterized by a short minority carrier lifetime and a high recombination rate.During the processing of the cells,a large number of defects will be generated on the side wall.Meanwhile,the surface dangling bonds lead to an increase in the density of states,and the recombination of surface photogenerated minority carriers has a serious negative impact on the photoelectric conversion performance.To improve the photoelectric conversion performance of the solar cells,we created grooves on the cell edges by photolithography and wet etching to reduce the defect density.We deposited a Si_(3)N_(4)film on the side wall of the solar cells by PECVD process to neutralize the dangling bonds on the side wall,achieving the passivation.The experiment results show that the photoelectric conversion performance has been improved by 2.73%compared with that of saw dicing process and by 1.25%compared with that of only wet etching.This article focused on the process,results,and discussion of Si_(3)N_(4)passivation of GaInP/GaAs/Ge solar cell edges.

关 键 词：PECVD 光刻 湿法刻蚀 侧截面 光电转换效率 

分 类 号：TM914.4[电气工程—电力电子与电力传动]