ZnO薄膜制备及其发光特性研究  

Preparation and Property Investigations of Magnetron Sputtered Zinc Oxide Thin Films

作　　者：王晶[1] 张希清[1] 梅增霞[1] 黄世华[1] 徐征[1] 

机构地区：[1]北方交通大学光电子技术研究所,信息存储,显示与材料开放实验室,北京100044

出　　处：《光电子．激光》2002年第11期1116-1119,共4页Journal of Optoelectronics·Laser

摘　　要：用射频磁控反应溅射法分别在未加热和加热的石英玻璃衬底上制备ZnO薄膜,在不同温度下进行退火处理,研究衬底温度、退火条件对其结构和发光性能的影响。通过对样品的X射线衍射(XRD)、吸收光谱和光致发光(PL)光谱的测量结果表明,衬底温度为230℃、退火温度为400℃时样品结晶性能最佳,并具有最强的紫外光发射(380nm)。The paper reports ZnO thin films on quartz substrates deposited by radio frequency reactive magnetron sputtering.In order to investigate the effects of substrate temperatures and annealing conditions on the structural and optical properties of sputtered ZnO thin films,the samples have been formed on unheated and heated substrates and then have been annealed at various substrate temperatures.The results obtained by Xray diffraction(XRD),absorption spectra and photoluminescence(PL) measurements show ZnO thin films deposited at 230 ℃ substrate temperature and then annealed at 400 ℃ have the best crystallization and the most intensive UV light emission(380 nm).

关 键 词：ZNO薄膜 制备 发光特性 磁控溅射 光致发光 氧化锌 半导体化合物 

分 类 号：TN304.21[电子电信—物理电子学]