AlGaN/GaN SBD的正向导通特性研究  

The Forward Conduction Characteristics of AlGaN/GaN Schottky Barrier Diode

作　　者：孙晓[1] 郭伟玲[1] 徐儒[1] 朱彦旭[1] 孙捷[1] 陈艳芳[1] 李松宇 邹德恕[1] 

机构地区：[1]北京工业大学光电子技术省部共建教育部重点实验室,北京100124

出　　处：《固体电子学研究与进展》2015年第5期420-423 452,452,共5页Research & Progress of SSE

基　　金：国家863资助项目(2015AA033305)

摘　　要：主要研究了横向AlGaN/GaN异质结肖特基势垒二极管(简称SBD)的正向导通特性,设计制备了基于蓝宝石衬底和硅衬底的不同器件结构的AlGaN/GaN SBD器件。测量结果表明,通过适当改变肖特基-欧姆电极布局,以及在导电衬底上施加相应的偏压,可以有效改善器件的正向导通特性。实验所制备的肖特基电极半径为120μm、肖特基-欧姆电极间距为25μm的基于Al2O3衬底的AlGaN/GaN SBD器件,实现了正向导通电流0.05A@2V(Ron=9.13mΩ·cm2)、反向饱和漏电流为10-6 A的性能。对制备的硅基AlGaN/GaN SBD器件的测试发现,通过外加衬底偏压能够有效改善其正向导通特性。The forward conduction characteristics of lateral AlGaN/GaN heterojunction Schottky barrier diode(SBD)were reseached.Different structures of AlGaN/GaN SBD based on sapphire substrate and silicon substrate were fabricated.It was experimentally shown that forward conduction characteristics of the device could be effectively improved by appropriately changing the Schottky-ohmic electrode layout,or applying a small bias voltage on the conductive substrate appropriately.The fabricated AlGaN/GaN SBD devices based on Al2O3 substrate,with Schottky electrode radius of 120μm and Schottky-ohmic electrode spacing of 25μm,and being achieved the forward current of 0.05A@2V(Ron=9.13mΩ·cm2),and the reverse saturation leakage current of 10-6 A.In the test of the fabricated AlGaN/GaN SBD devices based on silicon substrate,it was found that the forward conduction characteristics could be improved by applying the substrate bias.

关 键 词：肖特基势垒二极管 铝镓氮/氮化镓 电极布局 衬底偏压 

分 类 号：TN311.7[电子电信—物理电子学]