SiN钝化对InGaAs/InP双异质结双极性晶体管直流性能的影响  

Effect of SiN Passivation on the DC Performance of InGaAs/InP DHBTs

作　　者：谢俊领 程伟[1] 王元[1] 常龙[1] 牛斌[1] 陈堂胜[1] 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2015年第6期597-601,共5页Research & Progress of SSE

摘　　要：研究了SiN钝化对InGaAs/InP双异质结双极性晶体管(DHBT)直流性能的影响。在不同温度和不同气体组分条件下淀积了SiN薄膜,并对钝化器件的性能进行了测量和比较。结果表明,低的淀积温度有利于减小淀积过程对器件的损伤;采用氮气(N_2)和硅烷(SiH_4)取代常用的氨气(NH_3)和硅烷(SiH_4)作为淀积SiN薄膜的反应气体,显著地减少了器件发射结(B-E)和集电结(B-C)泄漏电流。另外,与未钝化器件的直流性能相比,钝化后器件的电流增益增加,基区表面复合电流大幅减小,这对提高器件的可靠性至关重要。The effects of SiN passivation layer on the DC properties of InGaAs/InP double heterojunction bipolar transistors(DHBTs)were studied.SiN thin film was deposited under different temperatures using different gas components.The DC characteristics of passivated devices were measured and analyzed.The results showed that low deposition temperature was helpful to reduce surface damages of the device during deposition.Furthermore,the leakage currents of B-E junction and B-C junction were drastically decreased by using N_2 and SiH_4 instead of NH_3 and SiH_4 as the reactant gas for SiN thin film.Moreover,in contrast with the DC performance of unpassivated devices,the current gain was increased and the base surface recombination current was suppressed after SiN passivation,which was crucial for improving the device reliability.

关 键 词：氮化硅 钝化 磷化铟 双异质结双极性晶体管 

分 类 号：TN322.8[电子电信—物理电子学]