具有高K背栅的无电压回跳RC-IGBT静态特性研究  

Research on static characteristics of snapback⁃free RC⁃IGBT with high K back gate

作　　者：王楠 徐勇根 胡夏融 WANG Nan;XU Yonggen;HU Xiarong(School of Science,Xihua University,Chengdu 610039,China)

机构地区：[1]西华大学理学院,四川成都610039

出　　处：《现代电子技术》2025年第4期34-39,共6页Modern Electronics Technique

摘　　要：针对传统RC-IGBT导通压降大、击穿电压低等问题,提出一种具有高介电常数(高K)背栅的RC-IGBT器件结构,其特点是位于底部集电极的背栅介质采用高介电常数材料。高K介质增大了正向导通时背栅周围的空穴浓度,不仅消除了电压回跳,还降低了导通压降。仿真结果表明:在高正向导通电流密度下(I_(CE)=925 A/cm^(2)),高K背栅RC-IGBT的导通压降为1.71 V,相比传统RC-IGBT降低了19.34%,相比氧化层背栅RC-IGBT降低了13.20%;另一方面,在阻断状态下,高K介质增强了背栅周围的电子积累,增大了击穿电压。高K背栅RC-IGBT的击穿电压为1 312 V,相较于氧化层背栅RC-IGBT提高了44.18%。此外,高K背栅RC-IGBT的反向导通压降相比传统RC-IGBT降低了43.43%,相比氧化层背栅RC-IGBT降低了13.85%。将所提出的高K背栅的RC-IGBT应用于高压、大功率的电子电力系统,可提高系统的可靠性并降低损耗。In allusion to the problem of high on-state voltage drop(Von)and the low breakdown voltage,a high permittivity(high K)back gate reverse conducting insulated gate bipolar transistor(HK-BG-RC-IGBT)device structure is proposed.Its characteristic is that the back gate dielectric located at the bottom collector is filled with HK.The HK dielectric increases the hole concentration around the back gate during the forward conduction,which not only eliminates the snapback-free,but also reduces Von.The simulation results show that,at high forward conduction current density(I_(CE)=925 A/cm^(2)),the Von of HK-BG-RC-IGBT is 1.71 V,which is 19.34%lower than that of the conventional RC-IGBT(C-RC-IGBT)and 13.20%lower than that of OXIde back gate RC-IGBT(OXI-BG-RC-IGBT).The HK dielectric enhances the electron accumulation around the BG in the blocking state,resulting in an increased breakdown voltage.The simulation results show that the breakdown voltage of the HK-BG-RC-IGBT is 1312 V,which is increased by 44.18%compared with OXI-BG-RC-IGBT.In addition,the reverse Von of the HK-BG-RC-IGBT is reduced respectively by 13.85%and 43.43%compared with OXI-BG-RC-IGBT and C-RC-IGBT.Applying the proposed HK-BG-RC-IGBT to high-voltage and high-power electronic power systems can enhance the system reliability and reduce the loss.

关 键 词：RC-IGBT 电压回跳 高介电常数 背栅 导通压降 阻断特性 

分 类 号：TN322.8-34[电子电信—物理电子学]