磁控溅射碲镉汞表面钝化模拟研究  

Simulation Study on the Surface Passivation of HgCdTe by Magnetron Sputtering

作　　者：高志富 王文 李树杰 耿松[1] 何胤 桂希欢 左大凡 李雄军[1] GAO Zhi-fu;WANG Wen;LI Shu-jie;GENG Song;HE Yin;GUI Xi-huan;ZUO Da-fan;LI Xiong-jun(Kunming Institute of Physics,Kumming 650223,China)

机构地区：[1]昆明物理研究所,昆明650223

出　　处：《红外》2025年第2期13-19,共7页Infrared

摘　　要：碲镉汞(HgCdTe)表面钝化层的化学计量比对器件性能具有至关重要的影响。通过SRIM软件模拟了Ar^(+)溅射能量和入射角度对表面钝化层化学计量比的影响。模拟结果表明,在300~500 eV能量范围内,CdTe和ZnS对Ar^(+)的核阻止本领远大于电子阻止本领,且ZnS的核阻止本领优于CdTe;离子入射角在60°附近时CdTe有最大溅射产额,入射角在70°附近时ZnS有最大溅射产额;溅射过程中存在择优溅射现象,Cd、Zn元素为择优溅射元素。基于模拟结果,长波碲镉汞表面钝化层的质量得到明显改善。该方法建立了钝化层计量比与溅射能量、入射角度之间的关系,为实际工艺过程提供了指导方向。这对于高性能碲镉汞红外探测器的研制具有一定的实际意义。The stoichiometric ratio of the surface passivation layer of mercury cadmium telluride(HgCdTe)has a crucial influence on the device performance.The influence of Ar^(+)sputtering energy and incident angle on the stoichiometric ratio of the surface passivation layer is simulated by SRIM software.The simulation results show that in the energy range of 300-500 eV,the nuclear stopping power of CdTe and ZnS for Ar^(+)is much greater than the electron stopping power,and the nuclear stopping power of ZnS is better than that of CdTe;the maximum sputtering yield of CdTe is found near the ion incident angle of 60°,and the maximum sputtering yield of ZnS is found near the incident angle of 70°;there is a preferential sputtering phenomenon in the sputtering process,and Cd and Zn elements are the preferential sputtering elements.Based on the simulation results,the quality of the passivation layer on the long-wave HgCdTe surface is significantly improved.This method establishes the relationship between the stoichiometric ratio of the passivation layer and the sputtering energy as well as the incident angle,which provides a guiding direction for the actual process.This has certain practical significance for the development of high-performance HgCdTe infrared detectors.

关 键 词：磁控溅射 阻止本领 表面钝化 溅射产额 择优溅射 

分 类 号：O484[理学—固体物理]