碳化硅衬底化学机械研磨机理  

Mechanism of Chemical Mechanical Planarization of Silicon Carbide

作　　者：罗付 蔡长益 潘宏明 詹阳 LUO Fu;CAI Changyi;PAN Hongming;ZHAN Yang(Beijing Jingyi Jingwei Technology Co.,Ltd.,Beijing 100176,China)

机构地区：[1]北京晶亦精微科技股份有限公司,北京100176

出　　处：《电子工业专用设备》2025年第1期21-27,共7页Equipment for Electronic Products Manufacturing

摘　　要：化学机械平坦化(CMP)作为能够实现局部和全局平坦化的唯一方法,被广泛应用于碳化硅衬底加工中,其成本在碳化硅衬底加工中占30%~40%[1]。抛光液作为化学机械平坦化的主要耗材之一,不同抛光液的选取对平坦化的效果不同。为此针对不同磨料的碳化硅衬底抛光液进行对比,对二氧化铈抛光液机理进行分析,并针对二氧化铈抛光液耗材搭配进行研究。最后根据二氧化铈抛光液的特性选用不同硬度的抛光垫以及不同下压力的修整器进行搭配测试,并计算单片作业成本以及WPH(每小时可完成的晶圆加工数量)等指标。Chemical mechanical planarization(CMP)as the only method to achieve local and global planarization,is widely used in silicon carbide substrate processing,and its cost accounts for about 30%~40%of silicon carbide substrate processing[1].As one of the main consumables for CMP,the selection of different slurry has different effects on planarization.Therefore,this paper compares silicon carbide substrate slurry with different abrasives,and analyzes the mechanism of ceria-base slurry,and studies the consumables matching of ceria slurry.Finally,based on the characteristics of cerium dioxide slurry,pads with different hardness and pad conditioners with different downforce are selected for combination testing,and the cost of single wafer processing and WPH(the number of wafer that can be processed per hour)are calculated.

关 键 词：碳化硅 化学机械平坦化 抛光液 抛光垫 修整器 

分 类 号：TN305.2[电子电信—物理电子学]