磷化铟晶体生长中的离解现象研究  

Resarch of Dissociation in the Growth of Indium Phosphide Crystals

作　　者：赵兴凯 韦华 柳旭 权忠朝 叶晓达 韩家贤 王顺金 ZHAO Xingkai;WEI Hua;LIU Xu;QUAN zhongchao;YE Xiaoda;HAN Jiaxian;WANG Shunjin(Yunnan Xinyao Semiconductor Materials Co.,Ltd.,Kunming 650503,China)

机构地区：[1]云南鑫耀半导体材料有限公司,云南昆明650503

出　　处：《金属材料与冶金工程》2025年第1期14-19,共6页Metal Materials and Metallurgy Engineering

基　　金：云南省科技计划项目(202202AB080018);昆明市春城青年高层次人才创新项目(C202105001)。

摘　　要：磷化铟(InP)在高温下很容易发生离解,抑制其离解成为生长磷化铟晶体的前提。通过实验研究了水平梯度凝固法(HGF)合成InP多晶,以及垂直梯度凝固(VGF)单晶生长过程中工艺条件与晶体离解之间的关系。实验表明:HGF要保持合成炉磷区的温度为575℃,多晶降温生长时间为120 h,合成所需的红磷粒径应在10~15 mm,平均密度为2.0g/cm^(3)以上,且表面具有明显的金属光泽,这样有利于生长出无离解、结晶良好的多晶;InP单晶VGF生长实验中,热场的温度梯度过大会造成晶体生长不完全,在快速冷却阶段迅速结晶而离解。Indium phosphide(InP)is highly susceptible to dissociation at high temperatures,and inhibiting its dissociation has become a fundamental requirement for the growth of InP crystals.The relationship between process conditions and crystal dissociation during the synthesis of InP polycrystals by the HGF method as well as the growth of single crystals by the VGF method was experimentally investigated.Experimental results indicate that HGF should maintain the temperature of the phosphorus zone of the synthesizing furnace at 575℃.The polycrystalline cooling growth time is 120 hours,and the particle size of red phosphorus required for the synthesis should be 10~15 mm,with an average density of more than 2.0 g/cm^(3)and an obvious metallic luster on the surface.This facilitates the growth of non-dissociated,well-crystallized polycrystals.Too large a temperature gradient in the thermal field causes incomplete crystal growth and dissociation by rapid crystallization during the rapid cooling phase.

关 键 词：磷化铟 离解 多晶合成 单晶生长 

分 类 号：TN304.2[电子电信—物理电子学]