钴化学机械抛光中抛光液及清洗剂的研究进展  

Research Progress of Polishing Slurry and Cleaning Solution in Chemomechanical Polishing Process for Cobalt

作　　者：张力飞 路新春[1] 张佳磊 赵德文[1] ZHANG Lifei;LU Xinchun;ZHANG Jialei;ZHAO Dewen(State Key Laboratory of Tribology in Advanced Equipment,Department of Mechanical Engineering,Tsinghua University,Beijing 100084,China)

机构地区：[1]清华大学机械系,高端装备界面科学与技术全国重点实验室,北京100084

出　　处：《材料导报》2025年第6期222-231,共10页Materials Reports

基　　金：国家自然科学基金(51991374)。

摘　　要：在当今集成电路技术飞速发展的时代背景下,随着工艺节点不断缩小至纳米级,互连结构及其工艺技术的挑战愈发严峻。钴(Co)作为一种新兴的金属材料,凭借其出色的热稳定性、优异的空隙填充能力和对铜(Cu)布线的强附着力,正逐步成为Cu互连阻挡层及潜在互连布线的热门选择。然而,随之而来的是对材料表面平整度与清洁度的极高要求,这直接促使了化学机械抛光(Chemomechanical polishing,CMP)工艺及其后清洗技术的发展与创新。本综述旨在回顾Co作为Cu互连阻挡层和新型互连布线在集成电路中的应用现状,深入分析CMP工艺中抛光液的不同组分对Co去除速率、电偶腐蚀和去除速率选择比等方面的影响。同时,探讨了在CMP清洗过程中清洗剂的关键作用,通过精确设计的化学配方,有效剥离纳米颗粒、有机残留等污染物,确保Co表面达到高度清洁与平整度标准。此外,还敏锐地指出了当前研究中的局限,并对Co的CMP及后清洗技术在追求更环保、更高效方向进行了前瞻性展望。In the rapidly evolving landscape of integrated circuit technology,as process nodes continue to shrink to the nanometer level,the demands placed on interconnect materials and their processing technology are becoming increasingly stringent.Cobalt(Co),an emerging metal ma-terial,is gaining traction as a preferred choice forcopper(Cu)interconnect barrier layers and potential interconnect materials due to its exceptional thermal stability,void-free filling ability,and strong adhesion to Cu wiring.However,this heightened interest in cobalt is accompanied by a high demand for surface smoothness and cleanliness,driving extensive research and innovation in chemomechanical polishing(CMP)processes and post CMP cleaning process.This paper aims to review the current application status of Co as Cu interconnect barrier and new interconnect material in integrated circuits,respectively.The impact of various slurry components on the material removal rate,galvanic corrosion,and removal selection ratio in CMP process are analyzed.Furthermore,the crucial role of cleaning solutions is discussed in post CMP cleaning process.Through precise chemical formula design,defects such as nanoparticles and organic residues can be effectively removed to ensure that the Co surface achieves high levels of cleanliness and flatness.Additionally,the review identifies the limitations of current research and offers forward-looking insights into the development of more environmentally friendly and efficient Co CMP and post-CMP cleaning technologies.

关 键 词：化学机械抛光 钴 阻挡层 互连层 抛光液 清洗剂 

分 类 号：TN305.2[电子电信—物理电子学] TQ421.4[化学工程]