超宽禁带氧化镓功率器件新结构及其电热特性研究进展  

Research Progress of Ultra-Wide Bandgap β-Ga_(2)O_(3)Power Devices on Novel Structures and Electro-Thermal Characteristics

作　　者：魏雨夕 马昕宇 江泽俊 魏杰[1] 罗小蓉[1,2] WEI Yuxi;MA Xinyu;JIANG Zejun;WEI Jie;LUO Xiaorong(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;College of Microelectronics,Chengdu University of Information Technology,Chengdu 610225,China)

机构地区：[1]电子科技大学电子薄膜与集成器件全国重点实验室,成都610054 [2]成都信息工程大学微电子学院,成都610225

出　　处：《人工晶体学报》2025年第2期263-275,共13页Journal of Synthetic Crystals

基　　金：稳定专项(WDZC202446003);电子薄膜与集成器件全国重点实验室开放课题项目(KFJJ202306)。

摘　　要：氧化镓(β-Ga_(2)O_(3))具有超宽禁带(E_(g)=4.5~4.9 eV)和高临界击穿场强(E_(br)=8 MV/cm),器件的Baliga优值理论上可达SiC和GaN基器件的4倍和10倍。然而,氧化镓功率器件的耐压仍远低于理论值,且大功率器件及其热稳定性的研究较少;材料热导率低和缺陷多也导致器件发生电学特性漂移、性能加速退化等可靠性问题。本文首先介绍本团队在氧化镓功率器件新结构方面的研究进展,对研制的样品进行测试分析并研究其电热特性;然后开展了氧化镓金属氧化物半导体场效应晶体管(MOSFET)和异质结场效应晶体管(HJFET)的电热可靠性研究,本团队提出电离陷阱模型和界面偶极子电离模型解释其性能退化机制,此外,提出了一种新的可靠性加固技术,以提高β-Ga_(2)O_(3)HJFET的电热可靠性。结果表明,氧化镓功率器件在高压、低功耗和高可靠性应用方面具有很大潜力。这些研究为氧化镓功率器件设计和优化提供新的思路,有力助推氧化镓功率器件实用化进程。Gallium oxide(β-Ga_(2)O_(3))exhibits an ultra-wide bandgap(E_(g)=4.5~4.9 eV)and a high critical breakdown electric field(E_(br)=8 MV/cm).The Baliga's figure of merit forβ-Ga_(2)O_(3)-based devices is theoretically approximate four times and ten times as large as that of SiC-and GaN-based devices,respectively.Nevertheless,the breakdown voltage of β-Ga_(2)O_(3)power devices is considerably below the theoretical limit;and there are few studies on high-power devices and their thermal stability.In addition,the low thermal conductivity of β-Ga_(2)O_(3)materials and the presence of multiple defects result in many reliability issues,including the shift of electrical characteristics and the accelerated degradation of device performance.First,this work presents our researches on novel structures of β-Ga_(2)O_(3)power devices,including the analysis of experimental results measured from the fabricated devices and the investigation of their electro-thermal characteristics.Second,this work studies the electro-thermal reliability of β-Ga_(2)O_(3)mental-oxide-semiconductor field-effect transistor(MOSFET)and heterojunction field-effect transistor(HJFET).The ionized traps model and interface dipole ionization model are proposed to explain the degradation mechanism of β-Ga_(2)O_(3)MOSFET and HJFET.Additionally,a novel reliability reinforcement technology is proposed to enhance the electro-thermal reliability of β-Ga_(2)O_(3)HJFET.These studies indicate the considerable potential of β-Ga_(2)O_(3)power devices in high-voltage,low-loss and high-reliability applications.Further,these studies provide novel insights into the design and optimisation of β-Ga_(2)O_(3)power devices,and effectively advance the practical development of β-Ga_(2)O_(3)power devices.

关 键 词：氧化镓 功率半导体器件 二极管 场效应晶体管 电热特性 可靠性 

分 类 号：O47[理学—半导体物理] TN303[理学—物理]