用于MEMS器件的高性能运算放大器的IC设计与测试  

IC Design and Test of a High Performance Operational Amplifier Applied in Certain MEMS Devices

作　　者：程未[1] 冯勇建[1] 杨涵[1] 

机构地区：[1]厦门大学萨本栋微机电研究中心,福建厦门361005

出　　处：《现代电子技术》2003年第4期49-52,共4页Modern Electronics Technique

摘　　要：根据特定电容式微传感器后续处理电路的高性能要求,设计一个运算放大器芯片。设计中采用了美国MOSIS公司提供的n阱0.35μm cmos工艺的SPICE BSIM3 mos管模型,手算估计芯片的参数,然后采用了两种能系统反映芯片特性的测量电路对设计进行了性能测量,并根据测试结果对设计做出相应调整。从最终测试结果来看,设计的运算放大器具有很好的静态和动态性能。According to the specific performance objectives required by certain micro capacitive sensors, a high performance OpAmp was designed. Using the SPICEBSIM 3 model parameters for the 0. 35 fim, n -Well CMOS process provided by the MOSIS service, the hand calculations to estimate device sizes and bias currents were firstly made. Two test circuits used to test the systemic function of the OpAmp help adjust the initial design. The finial test results indicate the high performance of the OpAmp.

关 键 词：MEMS器件 运算放大器 测试电路 微机电系统 

分 类 号：TN722.77[电子电信—电路与系统]