纳米ZnO薄膜掺磷、硼的电学性能研究  

AUGER ANALYSIS OF NANO-ZnO THIN FILMS DOPED WITH PHOSPHORUS OR BORON

作　　者：王文青[1] 陈晓伟[1] 高军 韩晓英[1] 宋淑芳[3] 赵金茹[1] 

机构地区：[1]中国兵器工业第五二研究所,包头014034 [2]包头蓝亚光电科技有限公司,包头014031 [3]中国科学院半导体研究所,北京100083

出　　处：《理化检验（物理分册）》2003年第1期19-21,共3页Physical Testing and Chemical Analysis(Part A:Physical Testing)

摘　　要：用扫描俄歇探针研究了掺杂磷、硼对纳米ZnO薄膜电学性能的影响。结果表明 ,ZnO薄膜掺入磷或硼后 ,可以显著降低薄膜电阻 ;改变扩散温度可以改变磷、硼浓度 ,从而改变Zn/O化学计量比 ,Zn/O化学计量比越大 ,薄膜电阻越小 ;掺磷或硼的ZnO薄层电阻最低值时的扩散温度分别为 85 0℃和 80 0℃。The effect of the doped phosphorus or boron on the electrical property of Nano-ZnO thin film is investigated by Scanning Auger Microprobe (SAM ) . Results show that the electrical resistance of the Nano-ZnO thin film decreases greatly after it is doped with phosphorus or boron. If the heat-treatment temperature changed, the concentration of phosphorus or boron will be changed. And the greater the Zn/O stoichiometric ratio, the less the electrical resistance. The electrical resistance of the surface layer of the thin film reaches the lowest when the thin film is doped with phosphorus and heat-treated at 850℃ or it is doped with boron and heat-treated at 800℃.

关 键 词：掺磷 俄歇分析 纳米ZNO薄膜 电学性质 掺硼 氧化锌薄膜 扩散温度 

分 类 号：O484.42[理学—固体物理] TN304.21[理学—物理]