HFCVD金刚石膜过程的气氛模拟与分析  

Simulation and Analysis of Gas Phase Environment in HFCVD Diamond Films Growth

作　　者：戚学贵[1] 陈则韶[1] 常超[2] 王冠中[2] 廖源[2] 

机构地区：[1]中国科学技术大学工程科学学院,合肥230027 [2]中国科学技术大学物理系,合肥230026

出　　处：《无机材料学报》2003年第1期200-206,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(59976038)

摘　　要：对热丝法化学气相沉积金刚石膜过程的气氛进行了模拟与分析.使用GRI-Mech3.0甲烷燃烧过程C/H/O/N四元体系热化学反应机理和动力学数据,模拟并分析了HFCVD金刚石膜的C/H气相化学反应,通过对反应流的简单模拟得到了衬底位置气相组成,结果与前人实验数据吻合.探讨了灯丝温度、碳源浓度和碳源种类等因素变化对衬底位置气相组成的影响.结果表明甲基是金刚石膜生长最主要的前驱基团,其作用远高于乙炔,而超平衡态原子氢的存在对金刚石膜的质量至关重要.The paper simulated and analyzed gas phase environment in diamond films growth by hot filament chemical vapor deposition(HFCVD). GRI-Mech3.0, a detailed thermochemical reaction mechanism of methane combustion chemistry, was used to simulate C/H gas chemistry in HFCVD diamond films reactors. By simply simulating the reactive flow, the gas composition at the position of the substrate was obtained, which agrees well with other's experimental results. The influences of filament temperature, carbon-contained gas concentration and hydrocarbon precursor gases in feed on gas phase and diamond films growth were discussed. The results suggest that CH3 other than C2H2 is the dominant diamond films growth precursor in HFCVD, while H superequilibrium above substrate is important for good diamond films growth.

关 键 词：HFCVD 气氛模拟 热丝法化学气相沉积 金刚石膜 气相化学 前驱基团 成膜过程 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]