Co/C/Si(100)结构固相外延生长CoSi_2  

Epitaxial Growth of CoSi_2 by Co/C/Si Solid Phase Epitaxy

作　　者：屈新萍[1] 徐蓓蕾[1] 茹国平[1] 李炳宗[1] W.Y.Cheung S.P.Wong Paul K.Chu 

机构地区：[1]复旦大学微电子学系ASIC及系统国家重点实验室,上海200433 [2]香港中文大学电子工程系 [3]香港城市大学物理和材料科学系

出　　处：《Journal of Semiconductors》2003年第1期63-67,共5页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :60 10 60 0 2 ) ;上海市教委资助;上海教育发展基金会曙光计划;中国教育部博士点基金;国家科委-比利时弗兰德合作资助项目~~

摘　　要：采用 Co/C/Si多层薄膜结构的中间层诱导固相外延方法在 Si(10 0 )上制备外延 Co Si2 薄膜 .用四探针电阻仪、XRD、AES、RBS等分析手段对该结构固相反应形成的薄膜的电学特性、组分、晶体结构等进行了表征 .结果表明 ,Co/C/Si多层结构经快速热退火 ,可以在 Si(10 0 )衬底上得到导电性能和高温稳定性良好的 Co Si2 薄膜 .C层的加入阻碍了 Co和 Si的互扩散和互反应 ,从而促进了 Co Si2 在硅衬底上的外延 .Interlayer mediated solid phase epitaxy (IMSPE) is a kind of important method to grow epitaxial CoSi 2 films on Si substrates.Since the epitaxy mechanism is still not very clear,it is quite necessary to choose certain interlayer to study its role in epitaxial growth of CoSi 2 on Si and the epitaxy mechanism.In this work,carbon is used for interlayer.Four point probe,XRD,AES,RBS are used to analyze the composition,electrical properties and crystallization of the formed film by solid state reaction.The results show that the CoSi 2 films with good electrical characteristics and thermal stability can be obtained for Co/C/Si structure after annealing.The C reacts with Co to form Co 3C alloy during the reaction,which acts as a diffusion barrier,retards the interdiffusion and mutual reaction between Co and Si.This promotes the epitaxial growth of CoSi 2 on Si substrates.The role of C interlayer during the epitaxial growth of CoSi 2 on Si is analyzed.

关 键 词：固相反应 固相外延 金属硅化物 二硅化钴 中间层诱导 

分 类 号：TN304.54[电子电信—物理电子学]