氮注入多晶硅栅对超薄SiO_2栅介质性能的影响  

Effects of Nitrogen Implantation into Gate Electrode on Characteristics of Ultra-Thin Gate Oxide

作　　者：许晓燕[1] 谭静荣[1] 黄如[1] 张兴[1] 

机构地区：[1]北京大学微电子所,北京100871

出　　处：《Journal of Semiconductors》2003年第1期76-79,共4页半导体学报（英文版）

基　　金：国家自然科学基金 (批准号 :699760 0 1);国家重点基础研究专项基金 (No.2 0 0 0 0 3 65 )资助项目~~

摘　　要：p+ 多晶硅栅中的硼在 Si O2 栅介质中的扩散会引起栅介质可靠性退化 ,在多晶硅栅内注入 N+ 的工艺可抑制硼扩散 .制备出栅介质厚度为 4 .6 nm的 p+栅 MOS电容 ,通过 SIMS测试分析和 I- V、C- V特性及电应力下击穿特性的测试 ,观察了多晶硅栅中注 N+工艺对栅介质性能的影响 .实验结果表明 :在多晶硅栅中注入氮可以有效抑制硼扩散 ,降低了低场漏电和平带电压的漂移 ,改善了栅介质的击穿性能 ,但同时使多晶硅耗尽效应增强、方块电阻增大 ,需要折衷优化设计 .p + polysilicon gate MOS capacitors with nitrogen implantation into gate electrode are manufactured.The influence of nitrogen on the penetration of boron through 4.6nm gate oxide into substrate is investigated by electrical and SIMS measurements.Boron is effectively prevented from diffusion because of the retardation effect in bulk polysilicon with the presence of nitrogen.Samples with nitrogen implantation have lower leakage current,smaller V FB shift and higher Q bd under constant current stress than the sample without nitrogen implantation.In return,increased sheet resistivity and gate depletion have to be taken into account for incorporating nitrogen within the polysilicon gate electrode.

关 键 词：氮注入 多晶硅 超薄SiO2栅 介质性能 栅介质 硼扩散 CMOS 

分 类 号：TN386.1[电子电信—物理电子学]