具有降场电极U形漂移区SOI-LDMOS的耐压特性  

Breakdown Characteristics of Novel SOI-LDMOS with Reducing Field Electrode and U-Type Drift Region

作　　者：罗卢杨[1] 方健[1] 罗萍 李肇基 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2003年第2期194-197,共4页半导体学报（英文版）

摘　　要：提出了一种具有降场电极 U形漂移区 SOI- L DMOS,借助 2 D泊松方程对其场分布进行解析分析和数值分析 ,结果证明该结构在与 RESURF结构相同的耐压下 ,具有器件长度小 ,漂移区浓度高 ,导通电阻小的特点 .这表明降场电极是一种缓和漂移区掺杂浓度和耐压之间矛盾的有效方法 .该结构是一种器件耐压与导通电阻优化的新途径 .A novel SOI LDMOS with reducing field electrode and U type drift region is proposed.And its field distribution is analyzed by both solving 2D Poisson equation analytically and simulating with MEDICI.The results show that the new structure can achieve breakdown voltage as high as conventional RESURF structure.The new structure has advantages of shorter device length,higher drift concentration and lower on resistance than conventional RESURF structure.It also shows that reducing field electrode structure is a good way to relief the contradiction between doping concentration of drift region and breakdown voltage.The structure of reducing field electrode and U type drift region is a new approach for tradeoff of breakdown voltage and on resistance.

关 键 词：降场电极 U形漂移区 耐压特性 SOI LDMOS RESURF 

分 类 号：TN386.2[电子电信—物理电子学]