VLSI金属互连电迁移1／f^γ噪声特性研究  

Research on the noise characteristics during the electromigration process in VLSI metal interconnects

作　　者：薛丽君[1] 杜磊[1] 庄奕琪[1] 徐卓[2] 

机构地区：[1]西安电子科技大学技术物理学院,陕西西安710071 [2]西安交通大学精细功能陶瓷重点实验室,陕西西安710049

出　　处：《西安电子科技大学学报》2003年第1期70-74,共5页Journal of Xidian University

基　　金：西安交通大学电子陶瓷与器件教育部重点实验室访问学者基金资助项目

摘　　要：通过对超大规模集成电路金属互连进行电迁移加速寿命实验和不同电迁移损伤程度的金属薄膜电阻及1/fγ噪声的测量和分析,得到了1/fγ噪声3Hz点功率谱密度和频率指数γ均随电迁移损伤程度加剧而变大的实验规律.分析表明,在同样的电迁移损伤程度条件下,1/fγ噪声点功率谱密度的相对变化量是电阻相对变化量的大约2000倍.此外,得到了1/fγ噪声频率指数随电迁移过程逐渐变大的实验规律.因此,1/fγ噪声功率谱密度和频率指数有可能作为比现在应用的电阻相对变化量更为灵敏的金属互连电迁移表征参量.Based on the accelerated life experiment and the measurement and analysis of the resistance and 1/fγ noise of metal film interconnects in VLSI with different levels of electromigration damages, we get the experimental law that the power density at 3?Hz and the frequency parameter γ of 1/fγ noise become larger with the exacerbation of the electromigration damages. With the same level of electromigration damages, the relative change of 1/fγ noise is about 2?000 times larger than that of resistance. For the first time, it is reported that γ becomes larger with the electromigration process. Therefore, the power density and γ of 1/fγ noise can be more sensitive parameters to represent the electromigration in metal interconnects than the parameter of resistance employed currently.

关 键 词：VLSI 超大规模集成电路 金属互连 电迁移 1/f噪声 

分 类 号：TN47[电子电信—微电子学与固体电子学]