衬底对化学气相沉积法制备氧化硅纳米线的影响  

Effects of substrates on silicon oxide nanowires growth by thermal chemical vapor deposition

作　　者：闫小琴[1] 刘祖琴[1] 唐东升[1] 慈立杰 刘东方[1] 周振平[1] 梁迎新[1] 袁华军[1] 周维亚[1] 王刚[1] 

机构地区：[1]中国科学院物理研究所,中国科学院凝聚态物理中心,北京100080

出　　处：《物理学报》2003年第2期454-458,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :1983 40 80 )资助的课题~~

摘　　要：通过化学气相沉积法在不同衬底上制备了大量的氧化硅纳米线 .选用衬底为Si片、带有约 10 0nm厚SiO2 氧化层Si片和石英片 .利用场发射扫描电子显微镜 (SEM)和透射电镜 (TEM ,配备有能谱仪 )对样品的表面形貌、结构和成分进行研究 .结果表明 :这些纳米线都为非晶态 ,但在不同衬底上生长的纳米线形貌、尺寸和化学成分不同 .讨论了各种衬底对不同特征氧化硅纳米线生长的影响 .Silicon oxide nanowires, grown on (100) Si wafers with the oxide layer about 100nm in thickness and on quartz plates, are investigated by exposing to the same conditions in a thermal chemical vapor deposition reactor at a temperature about 860℃. Field emission scanning electron microscopy, transmission electron microscope equipped with energy dispersive x ray analysis were used to characterize the samples. The results show that a large amount of amorphous silicon oxide nanowires was obtained. The morphology, size and chemical composition of the silicon oxide nanowires grown on different substrates are quite different. The reasons of forming different characteristic silicon oxide nanowires were discussed.

关 键 词：衬底 氧化硅 化学气相沉积 纳米线 纳米颗粒 纳米材料 

分 类 号：TN304.05[电子电信—物理电子学]