氧、氮掺杂硅基薄膜的荧光光谱  

Photoluminescence Spectrum of Oxygen and Nitrogen-doped Si-based Film

作　　者：黄翀[1] 石旺舟[1] 俞波[1] 

机构地区：[1]汕头大学物理系,广东汕头515063

出　　处：《光谱学与光谱分析》2003年第1期149-153,共5页Spectroscopy and Spectral Analysis

基　　金：广东省科学基金资助课题

摘　　要：采用磁控溅射法制备了氧、氮掺杂的非晶硅膜 ,测量了薄膜的荧光光谱 ,获得了包括红光、绿光、蓝光及紫光和紫外的强荧光发射 ,其荧光特性受氮、氧含量及沉积时基片温度的影响。结果表明 :红光包括起源于量子限制效应的宽带及氧缺陷能级引起的分立峰 ;绿光依赖于氮的掺杂 ,起源于氮的缺陷能级跃迁 ,其峰型和峰位受基片沉积温度的影响 ;蓝光部分表现为多个分立峰的叠加 ,起源于复杂的氧缺陷能级 ;紫光部分包括一对双峰和多个宽发射带 ,发射带的强度受掺杂种类、掺杂浓度及沉积时基片温度的影响。当基片温度为750℃、中等氧氮掺杂时 ,可获得强的绿光和紫光发射。O and N-doped amorphous Si-based films were prepared by magnetron sputtering, The photoluminescence (PL) spectra from the films were measured. A series of intense PL bands located in red, green, blue, violet and ultraviolet regions were observed, whose intensities were affected by the contents of 0 and N and the temperature of the substrate ( T-s) during deposition. Experimental results indicate that the red PL consists of wide band, which originates from quantum confinement effect, and the distinguishable peaks are related to 0 impurities. The green PL, which depends on N impurities, results from N defect level, and the type and position of its peaks are affected by T-s during deposition. The blue PL containing distinguishable peaks is related to complex 0 defect levels. The violet PL is composed of wide bands and a double peaks, and its PL intensity is influenced by the kind and content of impurity and T-s. In summary, the intense green and violet PL can be obtained when T-s during deposition is 750degreesC and the contents of 0 and N impurities are moderate.

关 键 词：氧 氮 掺杂 硅基薄膜 荧光光谱 非晶硅膜 磁控溅射法 

分 类 号：TN304.12[电子电信—物理电子学] O484.41[理学—固体物理]