GaAs衬底厚度对发光二极管稳定性的影响  

Influence of Substrate Thickness on the Stabilization of Light Emitting Doides

作　　者：周海龙[1] 黄柏标[1] 潘教青[1] 于永芹[1] 尉吉勇[1] 陈文澜[1] 齐云[1] 张晓阳[1] 秦晓燕[1] 任忠祥 李树强 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]山东华光光电子有限公司,济南250101

出　　处：《量子电子学报》2003年第1期125-128,共4页Chinese Journal of Quantum Electronics

摘　　要：在n+-GaAs(n=1×1018cm-3)衬底上,用MOCVD方法制备了610 nm的AlGaInP发光二极管的外延片,用X射线双晶衍射和PL谱表征了ALGaInP外延片样品的性质,通过对减薄到不同厚度的LED外延片的管芯在相同条件下的退化实验,发现了亮度的退化随厚度的减小而减小的结果。由理论计算结果可以得到,衬底厚度的降低对于LED样品稳定性产生作用的主要因素是由于产生的耗散热的减小而使缺陷增殖速度减小和非辐射复合中心浓度的相应降低,同时衬底厚度的降低也有助于提高AlGaInP LED的器件的稳定性。The 610 nm AlGaInP LEDs was prepared by MOCVD on the n+-GaAs(n=1×1018 cm-3), the X-ray double crystal diffraction and spatial PL spectrum map was used to analyze the AlGalnP epitaxial layers. Through the degenerate experiment of diffent thickness AlGalnP LED in the same condition, we found that the degenerate of LED luminance diminishes with the decrease of the GaAs substrate thickness. With the calculated result, we can get that the main reason that the better reliability of LED luminance with the decrease of the GaAs substrate thickness is the decreased heat out form the thin substract, and the decrease of the GaAs substrate thickness can also help to improve the reliability of AlGalnP LED device.

关 键 词：发光二极管 稳定性 厚度 砷化镓 GAAS MOCVD 薄膜 化学气相沉积法 

分 类 号：TN312.8[电子电信—物理电子学]