6H-Sic MOS结构电特性及其辐照效应的研究  

STUDY ON THE ELECTRIC CHARACTERISTICS AND RADIATION RESPONSE OF 6H-SIC MOS STRUCTURE

作　　者：尚也淳[1] 张义门[2] 张玉明[2] 刘忠立[1] 

机构地区：[1]中国科学院半导体研究所微电子研发中心,北京100083 [2]西安电子科技大学微电子研究所,西安710071

出　　处：《电子与信息学报》2003年第3期389-394,共6页Journal of Electronics & Information Technology

摘　　要：对SiC MOS结构辐照引起的电参数退化及其电特性进行了研究。结果说明:在氧化层电场较高时Fowler-Nordheim隧穿电流决定着SiC MOS结构的漏电流,当幅照栅偏压为高的正电压时,电离幅照对SiC MOS电容的影响会更明显,SiC MOS器件比Si器件具有好的抗γ辐照的能力,在58kGy(Si)的辐照剂量下,其平带电压漂移不超过2V。The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to 7 rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si).

关 键 词：6H-SIC MOS结构 电特性 辐照效应 平带电压 退火 漏电流 

分 类 号：TN386.1[电子电信—物理电子学]