低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管  

Low Turn-on Voltage of InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor

作　　者：郑丽萍[1] 严北平[1] 孙海锋[1] 刘新宇[1] 和致经[1] 吴德馨[1] 

机构地区：[1]中国科学院微电子中心,北京100029

出　　处：《Journal of Semiconductors》2003年第3期318-321,共4页半导体学报（英文版）

摘　　要：采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料 ,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPNInGaP/GaAsSb/GaAs双异质结晶体管 (doubleheterojunctionbipolartransistor,DHBT) .器件性能如下 :BE结的正向开启电压 (turn onvoltage)仅为 0 73V ;当IB=1μA/step时 ,直流增益达到了 10 0 ,BVCEO=5～ 6V .通过对基区不同Sb含量器件的比较得到 ,器件的直流特性与基区Sb的含量有关 .A NPN InGaP/GaAsSb/GaAs double heterojunction bipolar transistor with low turn-on voltage is fabricated using GaAsSb as the narrow band gap material for the base layer of GaAs HBTs.The devices have a great potential for reducing operating voltage and power dissipation.The turn-on voltage of the InGaP/GaAsSb/GaAs DHBT is only 0.73V,the DC current gain is about 100 and the breakdown voltage of emitter-collector BV CEO is 5～6V at a base current step of I B=1μA.Moreover,the results show that the DC performances of the DHBT are related to the percentage of the Sb in GaAsSb.

关 键 词：开启电压 GAASSB 双异质结晶体管 DHBT 

分 类 号：TN325.3[电子电信—物理电子学]