MOCVD生长InGaAs/Al_(0.2)Ga_(0.8)As应变多量子阱(英文)  

MOCVD Growth of InGaAs/Al_(0.2)Ga_(0.8)As Strained Multi-quantum Wells

作　　者：于永芹[1] 黄柏标[1] 尉吉勇[1] 潘教青[1] 周海龙[1] 岳金顺 李树强 张晓阳[1] 秦晓燕[1] 陈文澜[1] 齐云[1] 王笃祥 任忠祥 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]山东华光光电子有限公司,山东济南250101

出　　处：《光电子．激光》2003年第3期244-247,260,共5页Journal of Optoelectronics·Laser

摘　　要：用MOCVD方法生长了3种InGaAs/Al0.2Ga0.8As应变多量子阱(MQWs)样品,用于研究在气相中TMIn的含量对MQWs的发光波长和半峰宽(FWHM)以及在X射线中零级峰位的影响。研究表明,随着In组分在MQW中的增加,MQWs中应变也随之增加,这是造成FWHM增大的原因。同时也研究了应变MQWs中In组分与气相中TMIn含量的关系,为准确设计和控制MQWs的组分提供了依据。Three strained InGaAs/Al0.2Ga0.8As multiquantum wells(MQWs) samples were grown by MOCVD.From photoluminescence(PL) spectra at 300 K and double crystal Xray diffraction(DCXRD),we concluded the emission wavelengths of the strained MQWs and full width at half maximum(FWHM)of the PL peaks as well as the separation of rock angle(Δθ) between zero order peak of the strained MQWs and the peak of the substrate GaAs increased with the TMIn content in the gas phase.It was interpreted that the strain in the MQWs with Inincorporation induced an increase in FWHM.The dependence of the Incontent(xs) in strained MQWs at the solid phase on the TMIn content xv at the gas phase was also investigated.

关 键 词：InGaAs/Al0.2Ga0.8As 多量子阱 MQWs MOCVD In组分 

分 类 号：TN248.4[电子电信—物理电子学]