大功率InGaAsP/InGaP/GaAs激光器特性研究  

Study on High Power InGaAsP/InGaP/GaAs SCH SQW Lasers

作　　者：李忠辉[1] 高欣[1] 李梅[1] 王玲[1] 张兴德[1] 

机构地区：[1]长春光学精密机械学院高功率半导体激光重点实验室,130022

出　　处：《固体电子学研究与进展》2003年第1期11-13,共3页Research & Progress of SSE

摘　　要：介绍了无铝激光器的优点 ;利用 LP-MOVPE生长了 In Ga As P/In Ga P/Ga As分别限制异质结构单量子阱 (SCH-SQW)结构 ,讨论了激光器的腔长对特征温度的影响。对于条宽 1 0 0 μm、腔长 1 mm腔面未镀膜的激光器 ,连续输出光功率为 1 .2 W,阈值电流密度为 41 0 A/cm2 ,外微分量子效率为 62 % ,并进行了可靠性实验。InGaAsP/InGaP/GaAs SCH SQW lasers have been prepared by LP-MOVPE. The dependence of characteristics temperature ( T 0) on cavity length ( L) was discussed. The laser with 100 μm line width and 1 mm cavity length has output power of 1.2 W, threshold current density ( J th ) of 410 A/cm 2 and external differential efficiency ( η d) of 62% at laser wavelength of 808 nm. The experiments on the reliability were also carried out.

关 键 词：InGaAsP/InGaP/GaAs 分别限制异质结构 单量子阱 无铝激光器 大功率量子阱激光器 测试 

分 类 号：TN248.4[电子电信—物理电子学]