GaAsFET的表面漏电  

Current leakage about GaAsFET surface

作　　者：李效白 马农农 侯晓远[3] 

机构地区：[1]专用集成电路国家重点实验室,石家庄市050051 [2]电子材料研究所,天津300192 [3]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《功能材料与器件学报》2003年第1期47-52,共6页Journal of Functional Materials and Devices

摘　　要：GaAs及其他Ⅲ-Ⅴ族半导体的表面漏电问题一直是人们感兴趣的研究课题,它对化合物半导体器件和电路的性能有重要的影响。Na+沾污GaAs表面使表面漏电大幅度上升,硫钝化GaAs场效应管大幅度减少了表面态。本文详细介绍本研究组在GaAsFET表面漏电的研究进展。Current leakage of the surface of GaAs and other Ⅲ-Ⅴsemiconductors arises great interest. The leakage has an important influence on characteristics and reliability of compound semiconductordevices and circuits. The current leakage is steeply raised on contaminated surface of GaAs by Na ion.The surface states can be decreased with sulfur passivation of GaAs field-effect trasistor(FET). Inthis paper our recent developments in the above area is described.

关 键 词：砷化镓场效应管 击穿电压 漏虫 Na^+沾污 硫钝化 

分 类 号：TN386[电子电信—物理电子学]