GaN基器件中的欧姆接触  

Ohmic Contacts in GaN-based Devices

作　　者：邵庆辉[1] 叶志镇[1] 黄靖云[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2003年第3期38-40,44,共4页Materials Reports

基　　金：国家重大基础研究项目基金(编号No.G2000068306)

摘　　要：GaN材料以其优良的光电性质,已成为制造发光器件和高温大功率器件的最有前途的材料。欧姆接触是制备GaN基器件的关键技术之一。着重论述了在n-GaN和p-GaN上制备欧姆接触的研究现状。Gallium nitride has become one of the most attractive materials for light emitting devices and high-temperature and high-power devices,due to its superior opto-electronic properties. Ohmic contact is a critical technology for preparing GaN based devices. In this paper,research progress in ohmic contacts in n-GaN and p-GaN is presented emphatically.

关 键 词：GaN基器件 氮化镓 欧姆接触 接触电阻率 半导体材料 电子器件 发光器件 微波器件 

分 类 号：TN1[电子电信—物理电子学] TN304.23