高选择性的SiO_2/Si干法腐蚀工艺  

Research into Silicon Dioxide dry Etching Processes with High Selectivity to Single Crystal Silicon and Polysilicon

作　　者：高东岳[1] 李莹[1] 郭常厚[1] 栾兰[1] 

机构地区：[1]东北微电子研究所,沈阳110032

出　　处：《微处理机》2003年第1期5-7,共3页Microprocessors

摘　　要：高选择性的二氧化硅对单晶硅及多晶硅的干法腐蚀工艺在半导体加工领域占有重要地位。本文通过大量实验研究出了一种以 CHF3和 SF6 作为主要进给气体 ,通过调节 CHF3和 SF6 的流量来相应地控制等离子体中有效的 F∶ C比率从而实现较高的腐蚀选择比或较高的腐蚀速率。Silicon dioxide etching processes with high selectivity to Polysilicon and single crystal silicon are required to fabricate contact structures. This paper's aim is to develop a SiO 2 Reactive Ion Etching process with high-selectivity based on a two step etch in which CHF 3 and SF 6 are chosed as the main feeding gases and the F∶C ratio is first adjusted to maximize cleanliness during the bulk etch and then for selectivity to single crystal silicon during the endpoint step.

关 键 词：高选择性 干法腐蚀工艺 大规模集成电路 设计 制造 等离子体 反应离子刻蚀 选择比 二氧化硅 硅 单晶硅 半导体加工 

分 类 号：TN47[电子电信—微电子学与固体电子学]