a-Si∶HTFT的寄生效应  

Parasitic Effect of a-Si∶H TFT

作　　者：宋跃[1] 邹雪城[2] 

机构地区：[1]湘潭师范学院物理与信息工程系,湘潭411201 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《Journal of Semiconductors》2003年第4期391-395,共5页半导体学报（英文版）

基　　金：国防基金资助项目 ( No.99J2 .4.1.JW0 5 14 )~~

摘　　要：a- Si∶ H TFT的栅源几何交迭会引起几何寄生电容 ,实验研究表明它并不能完全表征 TFT的寄生效应 ,研究发现由栅极和源极形成的电场的电力线交迭也会导致物理寄生效应且这种效应始终存在 .从 L CD的结构、材料、制备工艺等普遍性出发 ,依据交迭电力线建立了物理寄生效应模型并对其进行了详细的分析和计算 ,实验结果表明该方法是有效可行的 ,从而使 L CD寄生效应有了一个较完美的理论表征和分析计算方法 .The geometric parasitic capacitance exists because of the geometric overlap of source and grid.Experiment studies show that this can not completely describe parasitic effect.The overlap of electrolines in the electric field caused by source and grid electrodes also gives rise to physical parasitic effect,which exists from the beginning to the end.With generality consideration of LCD's preparation technology,material,structure etc.,its model is set up,and its analysis and calculating method are given in detail in the line of overlap electrolines.Experimental results show it is effective and feasible,so a better theoretical description and analysis calculation method is acquired about LCD parasitic effect.

关 键 词：A-SI:H TFT 寄生效应 电力线 物理寄生电容 补偿电容 液晶显示器 

分 类 号：TN141[电子电信—物理电子学]