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A-SI:H: 作品数：209被引量：178H指数：6; 导出分析报告; 相关领域：电子电信电气工程更多>>; 相关作者：陈光华胡跃辉朱秀红宋雪梅阴生毅更多>>; 相关机构：北京工业大学中国科学院兰州大学南开大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划河南省科技攻关计划更多>>

Synaptic a-Si:H/a-Ga_(2)O_(3) phototransistor inspired by the phototaxis behavior of organisms with all-optical and all-electrical stimulation modes: 《Nano Research》2024年第8期7631-7642,共12页Youngbin Yoon Youngki Kim Soowon Choi Jungdae Kwon Myunghun Shin; supported by the Korea Research Institute for Defense Technology Planning and Advancement(KRIT)grant funded by the Defense Acquisition Program Administration(DAPA)(No.KRIT-CT-22-046);by the National Research Foundation of Korea(NRF)grant funded by the Korean government(MSIT)(Nos.2021R1A2C1010256 and RS-2024-00352660).; To improve neuromorphic computing performance,neuromorphic system components should mimic the behaviors of organic systems.In this study,a synaptic a-Si:H/a-Ga_(2)O_(3)phototransistor featuring all-optical and-electri...; 关键词：synaptic phototransistor artificial synapse PHOTOTAXIS neuromorphic computing interface charge state optoelectronic synaptic device

High Responsivity and Ultra-Low Detection Limits in Nonlinear a-Si:H p-i-n Photodiodes Enabled by Photogating: 《Photonic Sensors》2023年第4期27-38,共12页Andreas BABLICH Maurice MÜLLER Rainer BORNEMANN Andreas NACHTIGAL Peter HARING BOLÍVAR; This work has received funding from the German Description Fund for Regional Development(Grant No.EFRE0200545)for the execution of the project and from DFG(Grant No.INST 221/131-1)for utilizing the instruments of the Micro and Nanoanalytics Facility(MNaF)for microscopy.; Photodetectors operating at the wavelength in the visible spectrum are key components in high-performance optoelectronic systems.In this work,massive nonlinearities in amorphous silicon p-i-n photodiodes enabled by th...; 关键词：Photogating amorphous silicon a-Si:H NONLINEARITY PHOTODETECTOR responsivity gain

Light soaking-induced performance enhancement in a-Si:H/c-Si heterojunction solar cells被引量：1: 《Science China Materials》2022年第12期3513-3517,共5页Qiyuan He Zechen Hu Xuegong Yu Pengjie Hang Lihui Song Dehang Lin Lifei Yang Deren Yang; the National Natural Science Foundation of China(61974129,62025403,and 61721005);the Natural Science Foundation of Zhejiang Province(LD22E020001);Lingyan Research and Development Project of Zhejiang Province(022C01215).; demonstrated to hydrogenate dangling bonds on the surface of crystalline silicon(c-Si),which reduces the interface defect density,thus enabling an outstanding passivation effect[1–3].However,like many other industria...; 关键词：非晶硅太阳电池饱和电流表面钝化稳定性测试阿伦尼乌斯光伏产业少子寿命

a-Si:H(p)/c-Si(n)异质结太阳电池的模拟优化被引量：1: 《可再生能源》2022年第3期313-317,共5页赵晓霞田宏波王伟宗军宫元波杨文魁宿世超; 北京市科技计划课题(Z201100004520003)。; 通过AFORS-HET软件模拟了TCO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n)/Ag结构的硅异质结电池中硅衬底电阻率、本征非晶硅薄膜厚度、发射极材料特性以及TCO功函数对电池性能的影响。结果表明:在其它参数不变的条件下,硅衬底电...; 关键词：硅异质结 AFORS-HET 硅衬底发射极 TCO薄膜

氢注入在硅异质结太阳电池a-Si:H窗口层中的研究被引量：1: 《太阳能学报》2021年第6期103-108,共6页陈仁芳张丽平吴卓鹏李振飞孟凡英刘正新; 中科院先导专项A(XDA17020403);国家自然科学基金面上项目(62074153);上海市科技创新行动计划项目(20dz1207103,19DZ1207602)。; 基于热丝化学气相沉积(Cat-CVD)系统开展氢注入对超薄(<10 nm)氢化非晶硅(a-Si:H)薄膜特性改善的研究,发现适当的氢注入可提高薄膜内的氢含量、降低其微结构因子并展宽其光学带隙。将该方法用于处理硅异质结(SHJ)太阳电池入光侧的本征...; 关键词：氢注入硅异质结太阳电池非晶硅薄膜钝化缺陷态

Simulation of a-Si:H/c-Si heterojunction solar cells: From planar junction to local junction: 《Chinese Physics B》2019年第12期370-377,共8页Haibin Huang Lang Zhou Jiren Yuan Zhijue Quan; Project supported by the National Key R&D Program of China(Grant No.2018YFB1500403);the National Natural Science Foundation of China(Grant Nos.11964018,61741404,and 61464007);the Natural Science Foundation of Jiangxi Province of China(Grant No.20181BAB202027); In order to obtain higher conversion efficiency and to reduce production cost for hydrogenated amorphous silicon/crystalline silicon(a-Si:H/c-Si) based heterojunction solar cells, an a-Si:H/c-Si heterojunction with lo...; 关键词：silicon solar cell a-Si:H/c-Si heterojunction short-circuit current local junction

PECVD 制程中N+ A-SI Layer沉积最佳工艺参数的探究被引量：1: 《真空科学与技术学报》2019年第10期927-931,共5页李明阳段大伟步超远赵晓翔王玉亮聂坤坤陈士娟李道杰; 本文采取4因子4水平田口设计,用等离子体增强化学气相沉积法制备了沉积在白玻璃上的单层N+A-SI:H薄膜,测试了薄膜的应力,膜厚,折射率,透过率,及SI-H/N-H键含量,综合评价不同参数配比条件下N+A-SI:H单层膜的膜质表现,针对比较重要的参数...; 关键词：N+A-SI:H 沉积参数田口设计

硅异质结太阳电池窗口层性能研究及高效电池制备被引量：2: 《太阳能学报》2018年第11期3069-3075,共7页谷士斌张娟任明冲杨荣李立伟郭铁; 主要研究a-Si:H(p)作为电池的发射极和ITO作为电池载流子收集层的材料性能及结构对HJT电池性能的影响。通过调整a—Si:H(p)材料的掺杂浓度、材料厚度和ITO的氧气,氩气分压、功率等工艺参数,获得工艺参数、材料性能和电池性能之间的关系...; 关键词：HJT太阳电池 ITO薄膜 a-Si:H(p) 掺杂浓度电导率

Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost被引量：4: 《Chinese Physics B》2018年第3期520-525,共6页Haibin Huang Gangyu Tian Lang Zhou Jiren Yuan Wolfgang R.Fahrner Wenbin Zhang Xingbing Li Wenhao Chen Renzhong Liu; Project supported by the Jiangxi Provincial Key Research and Development Foundation,China(Grant No.2016BBH80043);the Open Fund of Jiangsu Key Laboratory of Materials and Technology for Energy Conversion,China(Grant No.NJ20160032);the National Natural Science Foundation of China(Grant Nos.61741404,61464007,and 51561022); A novel structure of Ag gridlSiN_(x)/n+-c-Si/n-c-Si/i-a-Si:H/p^(+)-a-Si:HlTCO/Ag grid was designed to increase the ef-ficiency of bifacial amorphous/crystalline silicon-based solar cells and reduce the rear material c...; 关键词：silicon solar cell a-Si:H/c-Si heterojunction short-circuit current

新型等离子束源CVD制备a-Si:H薄膜特性的研究: 《压电与声光》2017年第5期698-701,706,共5页王堃黄霞张月黄惠良; 国家自然科学基金资助项目(61310306053); 采用等离子束源化学气相沉积(CVD)设备制备氢化非晶硅薄膜。使用台阶仪、UV-Vis-NIR分光光度计、X线衍射仪(XRD)及扫描电子显微镜(SEM)等手段表征样品。分析了该设备沉积的薄膜均匀度,并比较了本设备与普通电子束蒸发设备制备的薄膜表...; 关键词：等离子束源氢化非晶硅沉积速率 X线衍射反射光谱

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