AlGaN/GaN基HEMT器件的研究进展(英文)  

Research progress on AlGaN/GaN-based HEMT

作　　者：邵庆辉[1] 李蓓[1] 叶志镇[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《微纳电子技术》2003年第2期10-13,16,共5页Micronanoelectronic Technology

基　　金：Project supported by the State Major Basic Research Programe of China(G2000068306)

摘　　要：由于AlGaN具有高的击穿电场(3 MV/cm,是GaAs的7.5倍),且在AlGaN/GaN异质结处存在高浓度的极化诱导二维电子气,AlGaN基高电子迁移率晶体管是目前最适合应用于微波大功率放大领域的器件。着重对影响高频大功率AlGaN/GaN性能的材料结构和器件制作进行了阐述。The AlGaN high electron mobility transistor is currently the most suitable for high power amplification at microwave frequencies, due to its high breakdown field (3 MV/cm which is 7.5 times that of GaAs) and its enormous polarization induced 2DEG at the AlGaN/GaN heterojunction. In this paper, material structure and device processing issues related to the performance of high-frequency and high-power AlGaN/GaN are discussed.

关 键 词：AlGaN/GaN基HEMT器件 电子迁移率 晶体管 二维电子气 

分 类 号：TN325.3[电子电信—物理电子学]