CMOS电路γ总剂量辐射效应评论  

The Review of Radiation Effects of γ Total Dese in CMOS Circuits

作　　者：陈盘训[1] 高文明[1] 谢泽元[1] 米榜 

机构地区：[1]中国工程物理研究院应用电子学研究所,成都527信箱610003

出　　处：《核电子学与探测技术》1992年第1期27-34,共8页Nuclear Electronics & Detection Technology

摘　　要：本文从实验结果出发,评论了国产市售和加固CMOS电路抗γ总剂量的辐射特性。介绍了几种工艺CMOS电路阈电压、静态功耗电流、输入输出特性和传输延迟时间等对总剂量辐射的不同响应规则。对多种实验电路进行了为期两年的辐射特性退火观察。实验的同时,对美国RCA公司的一种未加固电路作了辐射测量。用该结果与国产电路的辐射特性作了比较。本文认为^(6O)Co源可以作为合适的核爆总剂量辐射效应模拟源。Radiation 'performances of commercial and rad-hard CMOS circuits are reviewed. Threshold voltage? static power current, F'in-F0ut characteristic tad propagation delay time related with total dose are presented for CMOS circuits!' from several manufacturing processes. The performance of radiation -annealing of experimental circuits had been observed for two years.The comparision has been made between the CMOS circuits made in China and the commercial RCA products.80Co y resource can serve as y simulator of the nuclear explosion.

关 键 词：CMOS电路 总剂量 辐射加固 退火 

分 类 号：TN46[电子电信—微电子学与固体电子学]