硅基集成电路的发展和新一代栅极氧化物材料的研究现状  

Development of Si-substrate integrated circuits and new generation dielectric oxide materials for MOS gates

作　　者：相文峰[1] 颜雷[1] 谈国太[1] 郭海中[1] 刘丽峰[1] 吕惠宾[1] 周岳亮[1] 陈正豪[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理》2003年第4期228-234,共7页Physics

基　　金：中国科学院创新工程北京物质科学基地择优项目

摘　　要：随着科学技术的进步和集成电路市场日益扩大的需求 ,硅基集成电路的集成度越来越高 ,而集成度的提高是以其核心器件金属氧化物半导体场效应晶体管 (MOSFET)的特征尺寸逐渐减小为基础的 .当栅极SiO2 介电层的厚度减小到原子尺度大小时 ,由于量子效应的影响 ,SiO2 将失去介电特性 ,因此必须寻找一种新的高介电常数 (high -K)的氧化物材料来代替它 .如今世界上许多国家都开展了替代SiO2 的介电氧化物材料的研究工作 .文章介绍了栅极介电层厚度减小带来的影响 ,栅极SiO2 介电层的高K氧化物材料的要求和粗选 ,并对近期高介电常数氧化物材料的研究状况作了简要的介绍和评述 .Due to market demand, the integration level of integrated circuits on Si substrates becomes higher and higher.However, improvements in the degree of integration is based on reduction of the dimensions of the fundamental active device in the circuit--the metal-oxide-semiconductor field effect transistor (MOSFET). When the SiO 2 layer of the gate is thinner than the size of an atom, it may not have the required insulating properties as a result of quantum effects. Hence we must search for a new high dielectric (high-K) oxide material to replace the conventional SiO 2. Today, efforts to find such new oxides are ongoing in many countries of the world. In this paper we describe how the properties of MOSFETs are affected when the SiO 2 layer thickness decreases, indicate the requirements and choice of alternative high-K oxide materials, and give an overview of recent research activities.

关 键 词：硅基集成电路 发展 栅极氧化物材料 金属氧化物半导体场效应晶体管 栅极介电层 高介电常数 

分 类 号：TN304.21[电子电信—物理电子学]