MOVPE生长GaAs/Al_xGa_(1-x)As超晶格及其TEM表征  

MOVPE GROWTH AND TEM CHARACTERIZATIONS OF GaAs/Al_xGa_(1-x)As SUPERLATTICES

作　　者：徐现刚[1] 黄柏标[1] 任红文[1] 刘士文[1] 蒋民华[1] 

机构地区：[1]山东大学晶体材料研究所,山东济南250100

出　　处：《红外与毫米波学报》1992年第2期139-144,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金

摘　　要：报道用金属有机汽相外延技术(MOVPE)生长GaAs/Al_xGa_(1-x)As超晶格结构材料及其光电器件应用,用横断面透射电子显微术(XTEM)表征外延层结构.在自电光效应光学双稳态器件(SEED)中,超晶格层-层之间界面清晰,厚度均匀,周期性完整.对某些用超晶格作缓冲层的高电子迁移率晶体管(HEMT)结构,观察到超晶格对生长面的平滑作用及间断生长造成的界面等.MOVPE growth of GaAs/Al_xGa_(1-x)As superlattices and their applications inrelative photoelectric devices are reported. Epilayer quantum heterostructures are charac-terized by using cross-sectional transmission electron microscopy (XTEM). In SelfElectrooptic Effect Devices (SEED), the superlaltice interfaces are abrupt and the barrierand well layers keep good uniformity. In some High Electron Mobility Transistors(HEMT), superlattices used as buffer layers smooth out the growing surface roughness.

关 键 词：MOVPE XTEM 半导体 砷化镓 

分 类 号：TN304.26[电子电信—物理电子学]