离子束辅助沉积立方氮化硼的试验研究  

Experimental investigation of c-BN films prepared by ion beam assisted deposition

作　　者：谭俊[1] 张平[1] 蔡志海[2] 王晓晴[2] 唐云[2] 

机构地区：[1]中国机械工程学会表面工程研究所,北京100072 [2]装甲兵工程学院装备维修材料室,北京100072

出　　处：《核技术》2003年第5期349-352,共4页Nuclear Techniques

基　　金：国家自然科学基金(59971065)资助

摘　　要：运用离子束辅助沉积(IBAD)法在硅片上制备了立方氮化硼(c-BN)薄膜, 研究了辅助能量、辅助束流及辅助束中氮气含量等参数对膜中c-BN含量的影响。用红外光谱(FTIR)及X射线光电子能谱(XPS)分析技术对得到的c-BN膜进行了分析。结果表明: 合适的离子辅助能量能够获得c-BN含量高的薄膜; 膜中c-BN的含量随辅助气体中N2含量的提高而增加;辅助束流对薄膜的形成影响不明显。The formation of boron nitride thin films on silicon wafer by ion beam assisted deposition was studied. The experimental study on energy and current of the assisted ion beam and on the percentage of nitrogen in the bombarding gas was carried out. The thin films were analyzed by infrared spectroscopy and X-ray photoelectron spectroscopy. The results show that the c-BN percentage in the films increases with the percentage of nitrogen in the bombarding gas and the c-BN percentage increases when ion beam energy is appropriate, and that ion beam current in the experiment has only little influence on the synthesis of the c-BN thin films.

关 键 词：立方氮化硼薄膜 离子束辅助沉积 X射线光电子能谱分析 红外光谱分析 

分 类 号：TG778.21[金属学及工艺—刀具与模具]