MBE生长InGaAs/In_(0.32≤x≤0.52)Al_(1-x)As MM-HEMT材料  

Growth of InGaAs /In _(0.32≤x≤0.52)Al_(1-x)As MM-HEMTs materials by MBE

作　　者：邱凯[1] 张晓娟[1] 陈建炉[1] 

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《微纳电子技术》2003年第6期26-28,共3页Micronanoelectronic Technology

摘　　要：在GaAs衬底上利用分子束外延技术生长了不同In组分的MetamorphicHEMT(简称MM-HEMT)。通过对MM-HEMT材料中台阶式缓冲层材料种类、台阶宽度、初始组分以及生长温度等生长参数、生长条件和结构参数进行优化,得到了具有良好电学性能的MM-HEMT材料,其二维电子气迁移率和浓度指标与国外同期水平相当。MM-HEMTs (short for metamorphic HEMTs )with different In contents on GaAs sub-strates have been grown by MBE.Good electrical properties of the materials for MM-HEMTs were gained through optimizing the graded buffer layers,step width,initial composition,the data of the growth temperature and structure as well as the growth conditions.The2DEG and concentra-tion of the materials correspond to the abroad level at the same period.

关 键 词：高电子迁移率晶体管 分子来外延 缓冲层 INGAAS 铟钙砷化合物 MM—HEMT材料 二维电子气迁移率 生长温度 

分 类 号：TN304.26[电子电信—物理电子学]