Pt/6H-SiC肖特基势垒二极管特性分析  

Analysis on Characteristics of Pt/6H-SiC Schottky Diode

作　　者：钟德刚[1] 徐静平[1] 高俊雄[1] 于军[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《微电子学》2003年第1期26-28,共3页Microelectronics

基　　金：湖北省自然科学基金(2000J158)

摘　　要：　采用直流磁控溅射法、Pt作肖特基接触的工艺,制作了N型6H-SiC肖特基势垒二极管,对肖特基势垒二极管的电学特性及温度特性进行了研究。实验结果表明,该器件具有很好的整流特性,反向电流小、击穿电压高,且在高温下器件波动很小,能够稳定地工作,适合于在高温(600°C)等恶劣环境下长期可靠地工作。The manufacturing process of ntype 6Hsilicon carbide Schottky diode with electrode deposited by DCmagnetron sputtering has been studied in the paper The electrical and temperature characteristics of Pt/6HSiC Schottky diode were studied Results show that the device has good rectifying property, lower reverse current and high voltage It can also operate stably at high temperature (600 °C) 

关 键 词：碳化硅 6H—SiC肖特基势垒二极管 宽禁带半导体 肖特基势垒二极管 直流磁控溅射 碳化硅 

分 类 号：TN311.7[电子电信—物理电子学]