压阻式金刚石压力微传感器的制作与测试  

Fabrication and Test of the Piezoresistive Diamond Pressure Microsensor

作　　者：凌行[1] 莘海维[1] 张志明[1] 孙方宏[1] 戴永兵[1] 沈荷生[1] 

机构地区：[1]上海交通大学微电子技术研究所,上海200030

出　　处：《微细加工技术》2003年第2期69-75,共7页Microfabrication Technology

基　　金：国家863计划新材料领域纳米专项资助项目(2002AA302613);上海市科技发展基金纳米专项资助项目(0159nm033);上海交通大学教育部薄膜与微细技术重点实验室资助项目

摘　　要：由于金刚石薄膜具有优良的高温压阻特性,适合于制作高温压力传感器。在Φ50mm〈100〉硅单晶衬底上用热丝CVD法生长本征多晶金刚石薄膜作为绝缘隔离层,通过掩模选择性生长法得到掺硼金刚石薄膜电阻条,再经金属化处理和腐蚀硅压力腔,得到了压阻式金刚石压力微传感器的原型器件。对该器件的压力输出特性测量表明,输出电压—压力曲线线性较好,重复性好,常温下灵敏度高。Due to its superior hightemperature piezoresistive characteristics,diamond film is very suitable for the fabrication of hightemperature pressure sensor. The fabrication and the test of the diamond pressure microsensor have been discussed. Using intrinsic polycrystalline diamond films,which were grown on 50 mm silicon substrate by means of HFCVD,as isolation layer, selective area deposition technology to prepare the Borondoped diamond films resistors, and followed with metalization and pressure cavities etching,the piezoresistive diamond pressure microsensor prototype devices have been obtained successfully. The measurements of their output characteristics show that the devices have good linearity and repeatability and high sensitivity at the room temperature.

关 键 词：压阻式 金刚石薄膜 压力微传感器 热丝CVD法 掩模选择性生长法 制作方法 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]